Gallium Nitride: A Versatile Compound Semiconductor as Novel Piezoelectric Film for Acoustic Tweezer in Manipulation of Cancer Cells
Gallium Nitride: A Versatile Compound Semiconductor as Novel Piezoelectric Film for Acoustic Tweezer in Manipulation of Cancer Cells
复制标题
氮化镓:一种多功能化合物半导体,可用作声镊操作癌细胞的新型压电薄膜
DOI:
10.1109/ted.2020.3002498
复制
发表时间:
2020
影响因子:
3.1
通讯作者:
Sun C
中科院分区:
文献类型:
--
作者:
Sun C
Gallium nitride (GaN) is a compound semiconductor which has advantages to generate new functionalities and applications due to its piezoelectric, pyroelectric, and piezo-resistive properties. Recently, surface acoustic wave (SAW)-based acoustic tweezers were developed as an efficient and versatile tool to manipulate nano- and microparticles aiming for patterning, separating, and mixing biological and chemical components. Conventional piezoelectric materials to fabricate SAW devices such as lithium niobate suffer from its low thermal conductivity and incapability of fabricating multiphysical and integrated devices. This article piloted the development of a GaN-based acoustic tweezer (GaNAT) and its application in manipulating microparticles and biological cells. For the first time, the GaN SAW device was integrated with a microfluidic channel to form an acoustofluidic chip for biological applications. The GaNAT demonstrated its ability to work on high power (up to 10 W) with minimal cooling requirement while maintaining the device temperature below 32°C. Acoustofluidic modeling was successfully applied to numerically study and predict acoustic pressure field and particle trajectories within the GaNAT, which agree well with the experimental results on patterning polystyrene microspheres and two types of biological cells including fibroblast and renal tumor cells. The GaNAT allowed both cell types to maintain high viabilities of 84.5% and 92.1%, respectively.
登录
查看更多内容
影响因子:
6.1
作者:
Mao Z;Xie Y;Guo F;Ren L;Huang PH;Chen Y;Rufo J;Costanzo F;Huang TJ
通讯作者:
Huang TJ
影响因子:
13.6
作者:
Tian, Zhenhua;Yang, Shujie;Huang, Tony Jun
通讯作者:
Huang, Tony Jun
影响因子:
9.7
作者:
Jewett, Scott A.;Makowski, Matthew S.;Ivanisevic, Albena
通讯作者:
Ivanisevic, Albena
影响因子:
17.1
作者:
Lee, Kyungheon;Shao, Huilin;Weissleder, Ralph;Lee, Hakho
通讯作者:
Lee, Hakho
影响因子:
48
作者:
Ozcelik A;Rufo J;Guo F;Gu Y;Li P;Lata J;Huang TJ
通讯作者:
Huang TJ