Investigation on the electric-field-induced Pockels effect and optical rectification in near-intrinsic silicon samples
Investigation on the electric-field-induced Pockels effect and optical rectification in near-intrinsic silicon samples
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近本征硅样品中电场引起的普克尔斯效应和光学整流的研究
DOI：
10.1016/j.optlastec.2011.09.004
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发表时间：
2012-04
影响因子：
5
通讯作者：
Jia Gang
中科院分区：
文献类型：
--
作者：
Zhu Jing-Cheng;Chen Zhan-Guo;Liu Xiu-Huan;Gao Yan-Jun;Mu Jin-Bo;Wang Zhen-Yu;Han Wei;Jia Gang
基于经典极化理论，我们研究并阐述了平面电容器结构的近本征硅样品空间电荷区电场感应（EFI）普克尔斯效应和光学整流的物理机制。特别是，研究了所施加的直流偏压对这些 EFI 效应的影响。结果表明，硅中普克尔斯效应产生的电光信号随着施加的直流电压和调制电压的变化而线性增加，光整流信号也随着直流偏压的作用而线性增强，但光整流的偏振特性没有变化。这些EFI效应的增强主要归功于硅样品中内建场的增强和空间电荷区域的扩展。还检测了硅的克尔效应，并与 EFI 普克尔斯效应进行了对比，验证了硅样品中 EFI 普克尔斯效应比克尔效应强得多。这些EFI效应对于硅光子学或硅光电子学的发展具有重要意义。
Based on the classical polarization theory, we studied and specified the physical mechanism of the electric-field-induced (EFI) Pockels effect and optical rectification in the space charge region of a near-intrinsic silicon sample with the planar capacitor structure. Especially, the effect of the applied DC bias on these EFI effects was investigated. The results show that the electro-optic signal from Pockels effect in silicon linearly increases with the applied DC voltage and the modulating voltage, and the signal of optical rectification is linearly enhanced by the DC bias as well, but the polarization characteristic of optical rectification does not vary. The enhancement of these EFI effects is mainly owed to the strengthening of the built-in field and the extension of the space charge region in the silicon sample. The Kerr effect of silicon was also detected and contrasted against the EFI Pockels effect, and it is verified that the EFI Pockels effect is much stronger than the Kerr effect in the silicon sample. These EFI effects are significant for the development of silicon photonics or silicon optoelectronics.
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影响因子：
64.8
作者：
Xu, QF;Schmidt, B;Lipson, M
通讯作者：
Lipson, M
DOI：
10.1049/ep.1970.0039
发表时间：
1970
期刊：
Electronics and Power
影响因子：
--
作者：
G. Pridham
通讯作者：
G. Pridham
影响因子：
64.8
作者：
Rong, HS;Jones, R;Paniccia, M
通讯作者：
Paniccia, M
影响因子：
3.6
作者：
AKTSIPETROV, OA;FEDYANIN, AA;MURZINA, TV
通讯作者：
MURZINA, TV
DOI：
10.1117/12.842676
发表时间：
2008-12
期刊：
2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference
影响因子：
--
作者：
N. Hon;K. Tsia;D. Solli;B. Jalali
通讯作者：
N. Hon;K. Tsia;D. Solli;B. Jalali