Effect of Rb-doping on the dielectric and tunable properties of Ba0.6Sr0.4TiO3 thin films prepared by sol-gel
Effect of Rb-doping on the dielectric and tunable properties of Ba0.6Sr0.4TiO3 thin films prepared by sol-gel
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Rb掺杂对溶胶-凝胶法制备Ba0.6Sr0.4TiO3薄膜介电和可调性能的影响
DOI：
10.1016/j.ceramint.2016.08.016
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发表时间：
2016-11
影响因子：
5.2
通讯作者：
Fu, Qiuyun
中科院分区：
文献类型：
--
作者：
Fan, Junwei;Hu, Yunxiang;Zheng, Zhiping;Fu, Qiuyun
由于BaxSr 1-xTiO 3（BST）薄膜的介电可调谐性和低介电损耗，人们对它们的兴趣越来越大。小浓度掺杂是提高SrTiO 3薄膜介电调谐性能和降低介电损耗的有效途径。迄今为止，已经研究了许多掺杂元素，但这不包括铷（Rb）的使用。在本研究中，我们在这里报告的Rb掺杂的表面形貌，介电和调谐性能的Ba 0. 6Sr 0. 4 TiO 3薄膜的溶胶-凝胶法制备的影响。结果表明，当Rb掺杂浓度为4mol%时，Ba0.6Sr0.4TiO3薄膜在377 kV/cm电压下的可调谐度从46.53%提高到63.37%。所观察到的改进源自增加的晶粒尺寸。掺杂效应包括Rb+离子占据复合材料的A位，并且由于氧化铷的熔点相对较低，在退火过程中还增强了晶粒生长。（Ba0.6Sr0.4）96%Rb4%TiO3薄膜的晶粒尺寸最大，表面均方根粗糙度（RMS）为2.409 nm，是所有铷掺杂浓度中最小的。它们还表现出最好的介电特性（在2 MHz下的品质因数值为31.53）。因此，Rb掺杂可以被认为是一种很有前途的方式来优化BST薄膜的介电性能，使其在微波可调谐器件中的潜在应用。
There is growing interest in BaxSr1−xTiO3(BST) thin films due to their dielectric tunability and low dielectric loss. Doping small concentrations of elements is an effective way to increase the dielectric tunability and decrease the dielectric loss of BaxSr1−xTiO3thin films. Many doping elements have been studied to date, but this does not include the use of rubidium (Rb). In this study, we reported here the effect of Rb-doping on the surface morphology, dielectric and tunable properties of Ba0.6Sr0.4TiO3thin films prepared by the sol-gel method. It was observed that the tunability of Ba0.6Sr0.4TiO3thin films was increased greatly from 46.53% to 63.37% at 377 kV/cm when Rb was doped at a concentration of 4 mol%. The observed improvements originate from increased grain size. Doping effects included occupation of the A site of the composites by Rb+ions, and also enhanced grain growth during the annealing process, due to the relatively low melting point of rubidium oxide. (Ba0.6Sr0.4)96%Rb4%TiO3thin films exhibited the largest grain size and a surface root-mean-square roughness (RMS) of 2.409 nm, the smallest among the various doping concentrations of rubidium used. They also exhibited the best dielectric characteristics (figure of merit value 31.53 at 2 MHz). Thus, Rb doping can be considered a promising way to optimize the dielectric properties of BST thin films for their potential application in microwave tunable devices.
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影响因子：
6.2
作者：
S. Acharya;Byung-Guk Ahn;C. Jung;J. Koh;I. Choi;Sang‐Kwon Lee
通讯作者：
S. Acharya;Byung-Guk Ahn;C. Jung;J. Koh;I. Choi;Sang‐Kwon Lee
DOI：
10.1209/0295-5075/114/47009
发表时间：
2016-05
期刊：
Europhysics Letters
影响因子：
--
作者：
Tanja Pečnik;A. Eršte;Aleksander Matavž;V. Bobnar;M. Ivanov;J. Banys;Feng Xiang;Hong Wang;B. Malič;S. Glinšek
通讯作者：
Tanja Pečnik;A. Eršte;Aleksander Matavž;V. Bobnar;M. Ivanov;J. Banys;Feng Xiang;Hong Wang;B. Malič;S. Glinšek
影响因子：
1.7
作者：
D. Dimos;M. Raymond;Robert W. Schwartz;H. Alshareef;C. Mueller
通讯作者：
D. Dimos;M. Raymond;Robert W. Schwartz;H. Alshareef;C. Mueller
影响因子：
2.1
作者：
K. C. Sekhar;Kyung Pyo Hong;Sung Hun Key;C. Han;Jun Chul Kim;Dong Soo Kim;Jong Chul Park;Y. Cho
通讯作者：
K. C. Sekhar;Kyung Pyo Hong;Sung Hun Key;C. Han;Jun Chul Kim;Dong Soo Kim;Jong Chul Park;Y. Cho
影响因子：
5.2
作者：
Y. Ye;T. Guo
通讯作者：
Y. Ye;T. Guo