Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes
Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes
复制标题
高功率氮化镓基蓝色垂直发光二极管的低温键合技术
DOI：
10.1016/j.optmat.2012.02.018
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发表时间：
2012-06
影响因子：
3.9
通讯作者：
L. Y. Ying
中科院分区：
文献类型：
--
作者：
B. P. Zhang;X. L. Hu;J. Y. Zhang;G. E. Weng;X. Q. Lv;H. J. Huang;M. Chen;X. M. Cai;L. Y. Ying
提出了一种低温Sn熔融键合技术在Si衬底上制备GaN基蓝色垂直发光二极管（LED）。首先，通过研究不同键合温度下制备的GaN LED外延层/Ag基反射镜/Si结构的光致发光（PL）谱，证实了当键合温度为250°C时，Ag基反射镜的质量没有下降。然后在此键合温度下制备了GaN基垂直蓝光LED。与传统的GaN基LED相比，垂直LED显示出改善的正向电流-电压特性，特别是，垂直LED的反向电流在反向偏压为-10V时低至39 nA。同时，垂直LED在200 mA下显示出约127%的光输出增加，并且当驱动电流增加到500 mA时没有观察到饱和。进一步的测量显示，垂直LED的结温要低得多。这些结果表明，锡熔融键合技术是一种有效的方法，用于制造大功率GaN基LED。
Low-temperature Sn fusion bonding technique was proposed to fabricate GaN-based blue vertical light-emitting diodes (LEDs) on Si substrate. First, by studying photoluminescence (PL) spectra of GaN LED epilayers/Ag-based mirror/Si structures fabricated at different bonding temperatures, it was confirmed that the quality of Ag-based mirror was not degraded when the bonding temperature was 250°C. Then GaN-based blue vertical LEDs were fabricated at this bonding temperature. As compared with conventional GaN-based LEDs, the vertical LEDs revealed improved forward current–voltage characteristic, especially, the reverse current of the vertical LEDs was as low as 39nA at the reverse bias of −10V. In the mean time, vertical LEDs showed an increase in light output of about 127% at 200mA, and no saturation was observed as the driving current increased to 500mA. Further measurement revealed that vertical LEDs had a much lower junction temperature. These results indicate that the Sn fusion bonding technique is an effective way for fabrication of high-power GaN-based LEDs.
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