Resputtering effect during MgO buffer layer deposition by magnetron sputtering for superconducting coated conductors
Resputtering effect during MgO buffer layer deposition by magnetron sputtering for superconducting coated conductors
复制标题
超导涂层导体磁控溅射沉积MgO缓冲层时的再溅射效应
DOI：
10.1116/1.4921198
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发表时间：
2015-05
影响因子：
2.9
通讯作者：
Z. H. Han
中科院分区：
文献类型：
--
作者：
S. Z. Xiao;F. Feng;K. Shi;S. T. Deng;T. M. Qu;Y. P. Zhu;H. Y. Lu;R. X. Huang;Z. H. Han
本研究采用射频磁控溅射法制备了MgO薄膜。与其他区域相比，直接面向靶中心的沉积区膜厚明显减小。这种厚度的减少可以归因于主要由氧原子和负氧离子组成的高能粒子轰击造成的重射效应。研究了沉积位置和溅射压力对沉积速率的影响。当薄膜沉积在单晶氧化钇稳定的氧化锆衬底上时，溅射改变了MgO薄膜的取向，从（111）变为（001）。根据沉积在不同位置的MgO薄膜的厚度计算了高能粒子的密度分布。高能粒子通量的发散角估计约为15°。高能粒子通量可能类似于离子束辅助沉积过程中的辅助离子通量，可以影响MgO薄膜生长的取向。
In this study, MgO thin films were deposited by radio-frequency magnetron sputtering. The film thickness in the deposition area directly facing the target center obviously decreased compared with that in other areas. This reduction in thickness could be attributed to the resputtering effect resulting from bombardment by energetic particles mainly comprising oxygen atoms and negative oxygen ions. The influences of deposition position and sputtering pressure on the deposition rate were investigated. Resputtering altered the orientation of the MgO film from (111) to (001) when the film was deposited on a single crystal yttria-stabilized zirconia substrate. The density distribution of energetic particles was calculated on the basis of the measured thicknesses of the MgO films deposited at different positions. The divergence angle of the energetic particle flux was estimated to be approximately 15°. The energetic particle flux might be similar to the assisting ion flux in the ion beam assisted deposition process and could affect the orientation of the MgO film growth.
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影响因子：
3.2
作者：
S. Miyata;A. Ibi;T. Izumi;Y. Shiohara
通讯作者：
S. Miyata;A. Ibi;T. Izumi;Y. Shiohara
影响因子：
1.5
作者：
Ishijima, Tatsuo;Goto, Kazuya;Toyoda, Hirotaka
通讯作者：
Toyoda, Hirotaka
影响因子：
4
作者：
IIJIMA, Y;TANABE, N;IKENO, Y
通讯作者：
IKENO, Y
DOI：
10.1116/1.581408
发表时间：
1998-07
期刊：
Journal of Vacuum Science and Technology
影响因子：
--
作者：
T. Drüsedau;M. Löhmann;B. Garke
通讯作者：
T. Drüsedau;M. Löhmann;B. Garke
DOI：
10.1116/1.569903
发表时间：
1979-01-01
期刊：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY
影响因子：
--
作者：
ROBINSON, RS
通讯作者：
ROBINSON, RS