Hot carriers induced quenching of defects luminescence in Si doped AlN with Al core
Hot carriers induced quenching of defects luminescence in Si doped AlN with Al core
复制标题
热载流子诱导铝核掺硅 AlN 缺陷发光猝灭
DOI：
10.1016/j.jlumin.2018.02.045
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发表时间：
2018-06
影响因子：
3.6
通讯作者：
Dezhen Shen
中科院分区：
文献类型：
--
作者：
Xiuhua Xie;Binghui Li;Zhenzhong Zhang;Dezhen Shen
We investigated the spatial cathodoluminescence (CL) quenching of Si doped AlN/Al shell/core particles along the radial direction. The quenching characteristic position gradually shifts to a more central location with emission wavelength increasing. This effect is due to the transport process of hot electrons, which produced by Al-plasmon decay via Landau damping. In this transport process, donor levels (Di) in AlN were partly occupied by hot electrons from Al core, which will reduce the quantum efficiency of recombination channeli(DitoAi). A phenomenological theory has been used to discuss carriers recombination dynamics processes.
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影响因子：
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影响因子：
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["D. F. Hevia
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["D. F. Hevia