Photoelectric properties of ITO thin films deposited by DC magnetron sputtering
Photoelectric properties of ITO thin films deposited by DC magnetron sputtering
复制标题
直流磁控溅射ITO薄膜的光电性能
DOI：
10.1088/1674-4926/32/1/013002
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Cheng, Shuying
中科院分区：
文献类型：
--
作者：
Liu, Wei;Cheng, Shuying
采用直流磁控溅射法在玻璃基片上制备了氧化铟锡（ITO）薄膜作为太阳能电池的减反射薄膜和透明电极。主要溅射条件为溅射功率、基片温度和工作气压。研究了上述溅射条件对ITO薄膜透射率和电导率的影响。实验结果表明，随着溅射功率从30 W增加到90 W，薄膜的透过率和电阻率均呈下降趋势。当衬底温度从25 ° C增加到150 °C时，透射率略微增加，而电阻率降低。随着工作压力从0.4增加到2.0 Pa，透射率降低，电阻率增加。当溅射功率为30 W，基片温度为150 °C，工作气压为0.4 Pa时，ITO薄膜具有良好的电学和光学性能，电阻率低于10−4 Ωcm，可见光透过率超过80%。因此，ITO薄膜适合作为太阳能电池的透明电极。
As anti-reflecting thin films and transparent electrodes of solar cells, indium tin oxide (ITO) thin films were prepared on glass substrates by DC magnetron sputtering process. The main sputtering conditions were sputtering power, substrate temperature and work pressure. The influence of the above sputtering conditions on the transmittance and conductivity of the deposited ITO films was investigated. The experimental results show that, the transmittance and the resistivity decrease as the sputtering power increases from 30 to 90 W. When the substrate temperature increases from 25 to 150 °C, the transmittance increases slightly whereas the resistivity decreases. As the work pressure increases from 0.4 to 2.0 Pa, the transmittance decreases and the resistivity increases. When the sputtering power, substrate temperature and work pressure are 30 W, 150 °C, 0.4 Pa respectively, the ITO thin films exhibit good electrical and optical properties, with resistivity below 10−4 Ωcm and the transmittance in the visible wave band beyond 80%. Therefore, the ITO thin films are suitable as transparent electrodes of solar cells.
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影响因子：
2.1
作者：
Kim, SS;Choi, SY;Jin, HW
通讯作者：
Jin, HW
影响因子：
3.2
作者：
Kim, H;Gilmore, CM;Chrisey, DB
通讯作者：
Chrisey, DB
DOI：
10.1002/pip.527
发表时间：
2004-03
期刊：
Progress in Photovoltaics: Research and Applications
影响因子：
--
作者：
A. Romeo;M. Terheggen;D. Abou‐Ras;D. Bätzner;F. Haug;Marc Kälin;D. Rudmann;A. Tiwari
通讯作者：
A. Romeo;M. Terheggen;D. Abou‐Ras;D. Bätzner;F. Haug;Marc Kälin;D. Rudmann;A. Tiwari
影响因子：
2.1
作者：
Salehi, A
通讯作者：
Salehi, A
影响因子：
2.1
作者：
V. Teixeira;H. Cui;Lijian Meng;E. Fortunato;R. Martins
通讯作者：
V. Teixeira;H. Cui;Lijian Meng;E. Fortunato;R. Martins