Coating SiC on Zircaloy-4 by magnetron sputtering at room temperature
Coating SiC on Zircaloy-4 by magnetron sputtering at room temperature
复制标题
室温磁控溅射在Zircaloy-4上沉积SiC
DOI：
10.1016/j.jallcom.2017.09.281
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发表时间：
2018-01
影响因子：
6.2
通讯作者：
Zhang Guo-Jun
中科院分区：
文献类型：
--
作者：
Bao Weichao;Xue Jiaxiang;Liu Ji-Xuan;Wang Xingang;Gu Yifeng;Xu Fangfang;Zhang Guo-Jun
在合金表面涂覆耐火陶瓷是提高涂层材料力学性能沿着耐腐蚀性和耐辐射性的一种可行途径。本文采用室温磁控溅射法在Zr-4合金衬底上制备了存款SiC薄膜。通过优化靶基间距、溅射功率和沉积气压等工艺参数，最终获得了硬度（25.61 GPa）、弹性模量（214.9 GPa）和临界载荷（8.24 N）均较高的致密SiC薄膜。结构表征表明SiC膜的纳米晶（约10 nm）结构，其预期显示比块状SiC更好的抗辐射性。深入研究了工艺参数特别是沉积压力对薄膜微观结构和力学性能的影响，包括溅射粒子能量差、晶粒形核和生长以及薄膜应力状态。
Coating refractory ceramics onto alloys has been considered to be a feasible way to enhance the mechanical properties along with the corrosion and radiation resistance of the cladding materials. Here, we report a room-temperature magnetron sputtering method to deposit SiC films onto Zircaloy-4 substrate. By optimizing variety of processing parameters including target-substrate distance, sputtering power and deposition pressure, we finally obtained a dense SiC film with high values of hardness (25.61 GPa), elastic modulus (214.9 GPa) and critical load (8.24 N). Structural characterization indicates nanocrystalline (∼10 nm) structures of the SiC films, which is expected to show better radiation resistance than bulk SiC. Effects of processing parameters especially the deposition pressure on film microstructures and mechanical properties have been investigated in depth, which involve difference in energy of sputtering particles, nucleation and growth of grains, and stress states of the deposited films.
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影响因子：
5.4
作者：
Musil, J.;Jirout, M.
通讯作者：
Jirout, M.
影响因子：
3.2
作者：
M. Losurdo;M. Giangregorio;P. Capezzuto;G. Bruno;F. Giorgis
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影响因子：
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通讯作者：
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影响因子：
2.7
作者：
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通讯作者：
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影响因子：
5
作者：
Leyland, A;Matthews, A
通讯作者：
Matthews, A