Flexible alumina films prepared using high-bias pulse power for OLED thin film encapsulation
Flexible alumina films prepared using high-bias pulse power for OLED thin film encapsulation
复制标题
使用高偏压脉冲功率制备用于 OLED 薄膜封装的柔性氧化铝薄膜
DOI：
10.1016/j.ceramint.2022.08.212
复制
发表时间：
2022-08
影响因子：
5.2
通讯作者：
Xiao Ouyang
中科院分区：
文献类型：
--
作者：
Heng Yuan;Yifan Zhang;Weiqing Yan;Zhiqiang Zhang;Qian Li;Lin Chen;Zeyu Yin;Bin Liao;Xiaoping Ouyang;Xiao Ouyang
为了克服柔性有机发光二极管器件（OLED）的湿度敏感性，可以使用物理气相沉积（PVD）技术来制备具有优异密度的薄膜封装（TFE）薄膜。应调制膜中的内应力以增强柔性，这可以防止结构退化。针对这些问题，采用超低占空比高偏压脉冲过滤阴极真空电弧（FCVA）制备了具有低内应力（− 57.6MPa）、优异可见光透过率、高封装密度和良好抗弯性能的Al 2 O3薄膜。在1000次弯曲循环后，在85 °C和85%相对湿度（R.H.）下，膜的水蒸气透过率（WVTR）增加到5.57 × 10 −3 g/m2/天。此外，还利用分子动力学方法研究了高偏压脉冲引起的薄膜内应力释放和离子浅注入的机理。
To overcome the moisture sensitivity of flexible organic light-emitting diode devices (OLEDs), physical vapor deposition (PVD) technology can be used to prepare films with excellent density for thin film encapsulation (TFE). The internal stress in the film should be modulated to enhance the flexibility, which can prevent structural degradation. To address these issues, a filtered cathode vacuum arc (FCVA) equipped with a superlow duty ratio high-bias pulsed was used to prepare Al 2 O 3 films with low internal stress (−57.6 MPa), excellent visible light transmittance, high packaging density, and good bending resistance. After 1000 bending cycles, the water vapor transmission rate (WVTR) for a film is increased to 5.57 × 10 −3 g/m 2 /day at 85 °C and 85% relative humidity (R.H.). In addition, the molecular dynamics (MD) is employed to investigate the mechanism of film internal stress release, as well as the shallow implantation of ions brought about by high-bias pulse.
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DOI：
10.1016/j.nimb.2010.05.063
发表时间：
2010-10
影响因子：
1.3
作者：
P. Karaseov;O. A. Podsvirov;K. Karabeshkin;A. Vinogradov;A. Azarov;N. Karasev;A. Titov;A. Smirnov
通讯作者：
P. Karaseov;O. A. Podsvirov;K. Karabeshkin;A. Vinogradov;A. Azarov;N. Karasev;A. Titov;A. Smirnov
影响因子：
3.2
作者：
Shi Xu;B. Tay;H. S. Tan;Li Zhong;Y. Tu;S. Silva;W. Milne
通讯作者：
Shi Xu;B. Tay;H. S. Tan;Li Zhong;Y. Tu;S. Silva;W. Milne
影响因子：
2.1
作者：
W. Heitmann
通讯作者：
W. Heitmann
影响因子：
9.5
作者：
Yuanxia Zheng;Sungwook Hong;G. Psofogiannakis;G. Rayner;S. Datta;A. V. van Duin;R. Engel-Herbert
通讯作者：
Yuanxia Zheng;Sungwook Hong;G. Psofogiannakis;G. Rayner;S. Datta;A. V. van Duin;R. Engel-Herbert
影响因子：
3.2
作者：
T. Tachibana;J. Glass
通讯作者：
T. Tachibana;J. Glass