Growth of SiC nanowires by low pressure chemical vapor infiltration using different catalysts
Growth of SiC nanowires by low pressure chemical vapor infiltration using different catalysts
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使用不同催化剂通过低压化学气相渗透生长 SiC 纳米线
DOI：
10.1016/j.jeurceramsoc.2016.04.004
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发表时间：
2016-11
影响因子：
5.7
通讯作者：
Zhang Litong
中科院分区：
文献类型：
--
作者：
Men Jing;Liu Yongsheng;Luo Rong;Li Weinan;Cheng Laifei;Zhang Litong
采用不同的催化剂，采用液相色谱法合成了SiC纳米线，考察了进气比（α）和催化剂对SiC纳米线合成的影响。平均直径随α的增大先减小后增大。在Ni基催化下，SiC纳米线长而细，且随浓度的增加而增加;在Fe基催化下，SiC纳米线短而粗，浓度的影响可以忽略。SiC纳米线的生长受气-液-固（VLS）生长机制控制，纳米线与金属液滴的液-固界面是SiC纳米线的生长面。在相同浓度下，Ni基催化剂下生长的直径随催化剂液滴直径的减小而减小，而Fe基催化剂下，由于催化剂液滴浓度较高，催化剂液滴对生长的直径影响不大。在2DC/SiC复合材料中合成了SiC纳米线，由于SiC纳米线的断裂、拔起和脱粘消耗能量，可以有效地提高材料的力学性能。
SiC nanowires were synthesized by LPCVI using different catalysts, and the influences of input gas ratio (α) and catalysts were investigated. The average diameter firstly decreased and then increased with increasing α. Under Ni-based catalysis, SiC nanowires were long and thin, and increased with increasing concentration; under Fe-based catalysis, they were short and thick, and the influence of concentration could be neglected. The growth of SiC nanowires was controlled by vapor-liquid-solid (VLS) growth mechanism and the liquid-solid interface between nanowire and metal droplet was the growth plane. At same concentration, the diameter grown under Ni-based catalyst decreased with decreasing diameter of catalyst droplet, while under Fe-based catalyst, the diameters were not affected by catalyst droplet because of the high concentration. SiC nanowires were synthesized in 2D C/SiC composites and could enhance the mechanical properties effectively because of energy consuming from the fracture, pulled up and debond of SiC nanowires.
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