Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.
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DOI：
10.1038/s41467-018-03140-z
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发表时间：
2018-02-14
影响因子：
16.6
通讯作者：
Zhao W
中科院分区：
文献类型：
--
作者：
Wang M;Cai W;Cao K;Zhou J;Wrona J;Peng S;Yang H;Wei J;Kang W;Zhang Y;Langer J;Ocker B;Fert A;Zhao W
基于MgO/CoFeB结构的垂直磁隧道结因其出色的热稳定性、缩放潜力和功耗，在磁随机存取存储器方面备受关注。然而，在同时具有高隧道磁电阻比和低结电阻的纳米柱中实现电流诱导翻转这一主要挑战仍有待解决。在此，我们报道了在纳米级垂直磁隧道结中的自旋转移矩翻转，其磁电阻比高达249%，电阻面积乘积低至7.0Ω·μm²，该结构由原子层厚的W层和双MgO/CoFeB界面组成。原子层厚的W层所诱导的高效共振隧穿传输，除了W层在退火过程中对高温扩散具有耐受性之外，还可能有助于实现比具有Ta层的传统结构更高的磁电阻比。对于半径为45nm的器件，临界翻转电流密度可低于3.0 MA·cm⁻²。
具有高隧道磁电阻和低结电阻的垂直磁隧道结在磁随机存取存储器方面很有前景。在此，作者在垂直磁隧道结中实现了具有249%的隧道磁电阻和低电阻 - 面积乘积的自旋转移矩翻转。
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω µm2, which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high-temperature diffusion during annealing. The critical switching current density could be lower than 3.0 MA cm−2 for devices with a 45-nm radius. Perpendicular magnetic tunnel junctions with large tunnel magnetoresistance and low junction resistance are promising for the magnetic random access memories. Here the authors achieve the spin-transfer-torque switching in perpendicular magnetic tunnel junctions with 249% tunnel magnetoresistance and low resistance-area product.
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影响因子：
4
作者：
Sato, H.;Yamanouchi, M.;Ohno, H.
通讯作者：
Ohno, H.
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作者：
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