A new form of impurity cluster in casting quasi-single crystalline silicon
A new form of impurity cluster in casting quasi-single crystalline silicon
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铸造准单晶硅中一种新的杂质簇形态
DOI：
10.1016/j.jcrysgro.2022.126704
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发表时间：
2022-07
影响因子：
1.8
通讯作者：
Lijun Liu
中科院分区：
文献类型：
--
作者：
Shanshan Tang;Jinping Luo;Chuanbo Chang;Quanzhi Wang;Lijun Liu
·在铸造单晶中发现了一种新的杂质聚集形式“黑点”。·“黑点”的形成归因于金属杂质的聚集。·提出了一种避免“黑点”形成的优化方法。铸造准单晶硅技术在开发用于制造光伏器件的高质量和低成本晶体方面非常有前途。在本研究中，我们在铸造准单晶中发现了一种被命名为“黑点”的新型杂质团簇，它不同于以往研究中发现的SiC/Si 3 N4颗粒引起的“阴影”。系统地研究了“黑点”，并使用电感耦合等离子体质谱（ICP-MS），光致发光（PL）和红外（IR）检测器的特点。检测结果表明，“黑点”由金属杂质组成。根据我们的分析，“黑点”的形成机制可能是由于金属杂质在固/液界面的某些区域的积累。这些成簇杂质在凝固成晶体后，没有被铸造准单晶中足够的晶界吸收，因此表现为“黑点”。在数值模拟的方向上提出了一种优化方法，并通过实验进行了验证，避免了“黑点”的形成。
• A new impurity clustering form “black spot” is found in the casting single crystal. • The formation of “black spot” is attributed to clustering of metal impurities. • An optimization method is proposed to avoid the formation of “black spot”. The casting quasi-single crystalline silicon technology is very promising in the development of high quality and low cost crystals for manufacturing photovoltaic devices. In this study, we find a new type of impurity cluster named as “black spot” in the casting quasi-single crystalline, which is different from the “shadows” caused by SiC/Si 3 N 4 particles discovered in previous research. The “black spot” is systematically studied and characterized using inductively coupled plasma mass spectrometry (ICP-MS), photoluminescence (PL), and infrared (IR) detectors. The test results show that the “black spot” is composed of metal impurities. According to our analysis, the formation mechanism of the “black spot” may be caused by the accumulation of the metal impurities in certain region of the solid/liquid interface. These clustering impurities are not absorbed by enough grain boundaries in the casting quasi-single crystalline after being solidified into the crystal and thus exhibit as “black spot”. An optimization method is proposed in the direction of numerical simulation and verified by experiments to avoid the formation of the “black spot”.
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影响因子：
6.9
作者：
Wenjia Su;Xiao Han;Chang Chuanbo;Zhiqiang Zhang;Z. Zhenzhong;Wei Yang;Jiulong Li;Junfeng Wang-Junfeng-W
通讯作者：
Wenjia Su;Xiao Han;Chang Chuanbo;Zhiqiang Zhang;Z. Zhenzhong;Wei Yang;Jiulong Li;Junfeng Wang-Junfeng-W
影响因子：
3.2
作者：
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通讯作者：
Peter Käshammer;T. Sinno
影响因子：
1.8
作者：
Ying Teng;Jyh-Chen Chen-Jyh-Chen-Chen-2108131943;Chung-Wei Lu;Chi-Yung Chen
通讯作者：
Ying Teng;Jyh-Chen Chen-Jyh-Chen-Chen-2108131943;Chung-Wei Lu;Chi-Yung Chen
影响因子：
1.8
作者：
C. Lan;A. Lan;C. F. Yang;H. Hsu;M. Yang;A. Yu;B. Hsu;W. Hsu;A. Yang
通讯作者：
C. Lan;A. Lan;C. F. Yang;H. Hsu;M. Yang;A. Yu;B. Hsu;W. Hsu;A. Yang
影响因子：
6.4
作者：
Lijun Liu;Qinghua Yu;Xiaofang Qi;Wenhan Zhao;Genxiang Zhong
通讯作者：
Lijun Liu;Qinghua Yu;Xiaofang Qi;Wenhan Zhao;Genxiang Zhong