Optical Dependence of Electrically Detected Magnetic Resonance in Lightly Doped Si:P Devices
Optical Dependence of Electrically Detected Magnetic Resonance in Lightly Doped Si:P Devices
复制标题
轻掺杂 Si:P 器件中电检测磁共振的光学依赖性
DOI:
10.1103/physrevapplied.7.064028
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发表时间:
2017
影响因子:
4.6
通讯作者:
Ramanathan, Chandrasekhar
中科院分区:
文献类型:
--
作者:
Zhu, Lihuang;van Schooten, Kipp J.;Guy, Mallory L.;Ramanathan, Chandrasekhar
Using frequency-modulated electrically detected magnetic resonance (EDMR), we show that signals measured from lightly doped () silicon devices vary significantly with the wavelength of the optical excitation used to generate the mobile carriers. We measure EDMR spectra at 4.2 K as a function of modulation frequency and applied microwave power using a 980-nm laser, a 405-nm laser, and a broadband white-light source. EDMR signals are observed from the phosphorus donor and two distinct defect species in all of the experiments. With near-infrared irradiation, we find that the EDMR signal primarily arises from donor-defect pairs, while, at higher photon energies, there are significant additional contributions from defect-defect pairs. The contribution of spins from different spatial regions to the EDMR signal is seen to vary as the optical penetration depth changes from about 120 nm at 405-nm illumination toat 980-nm illumination. The modulation frequency dependence of the EDMR signal shows that the energy of the optical excitation strongly modulates the kinetics of the underlying spin-dependent recombination (SDR) process. Careful tuning of the optical photon energy could therefore be used to control both the subset of spin pairs contributing to the EDMR signal and the dynamics of the SDR process.
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影响因子:
3.7
作者:
P. Cullis;J. Marko
通讯作者:
J. Marko
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
M. Suckert;F. Hoehne;L. Dreher;Markus Kuenzl;H. Huebl;M. Stutzmann;M. Brandt
通讯作者:
M. Brandt
DOI:
10.1021/acs.jpcc.6b11065
发表时间:
2017
期刊:
The Journal of Physical Chemistry C
影响因子:
--
作者:
Guy, Mallory L.;van Schooten, Kipp J.;Zhu, Lihuang;Ramanathan, Chandrasekhar
通讯作者:
Ramanathan, Chandrasekhar
DOI:
--
发表时间:
1987
期刊:
影响因子:
--
作者:
Toru Takahashi;B. Triplett;K. Yokogawa;T. Sugano
通讯作者:
T. Sugano
影响因子:
8.6
作者:
Franke, David P.;Hrubesch, Florian M.;Brandt, Martin S.
通讯作者:
Brandt, Martin S.