Epitaxial Growth of Bi(2)Se(3) Infrared Transparent Conductive Film and Heterojunction Diode by Molecular Beam Epitaxy.
Epitaxial Growth of Bi(2)Se(3) Infrared Transparent Conductive Film and Heterojunction Diode by Molecular Beam Epitaxy.
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DOI：
10.3389/fchem.2022.847972
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发表时间：
2022
影响因子：
5.5
通讯作者：
Bai Y
中科院分区：
文献类型：
--
作者：
Chuai YH;Zhu C;Yue D;Bai Y
采用分子束外延（MBE）方法在Al2O3（001）衬底上外延n型红外透明导电Bi2Se3薄膜。 Bi2Se3 与基底之间的取向为 Bi2Se3(001)//Al2O3(1 10)。传导机制遵循小极化子跳跃机制，激活能为 34 meV。该薄膜表现出n型导电性，室温下电阻率为7 × 10−4 Ωcm。该薄膜在室温下表现出 1,015 cm2/Vs 的优异载流子迁移率，并在近红外 (>70%) 和远红外 (>85%) 范围内保持光学透明度。据我们所知，在通过物理或化学方法生成的n型红外透明导电薄膜领域，Bi2Se3薄膜产生了最好的结果。为了演示此类薄膜的应用，我们制作了 N-Bi2Se3/P-CuScO2 异质结二极管器件，其 ∼3.3 V 阈值电压与 CuScO2 带隙值相当吻合。 Bi2Se3 薄膜的高光学透明度和导电性使其在需要从近红外到远红外的宽波长范围的光电应用中非常有前景。
Epitaxial n-type infrared transparent conductive Bi2Se3 thin film was cultivated by molecular beam epitaxy (MBE) method on Al2O3 (001) substrate. The orientation between Bi2Se3 and the substrate is Bi2Se3(001)//Al2O3(1 10). Conducting mechanism ensued the small-polaron hopping mechanism, with an activation energy of 34 meV. The film demonstrates conductivity of n-type, and the resistivity is 7 × 10−4 Ωcm at room temperature. The Film exhibits an excellent carrier mobility of 1,015 cm2/Vs at room temperature and retains optical transparency in the near-infrared (>70%) and far-infrared (>85%) ranges. To the best of our knowledge, the Bi2Se3 film yields the best result in the realm of n-type Infrared transparent conductive thin films generated through either physical or chemical methods. To demonstrate the application of such films, we produced N-Bi2Se3/P-CuScO2 heterojunction diode device, the ∼3.3 V threshold voltage of which conformed fairly well with the CuScO2 bandgap value. The high optical transparency and conductivity of Bi2Se3 film make it very promising for optoelectronic applications, where a wide wavelength range from near-infrared to far-infrared is required.
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