Hole-transmission enhancement in 4H-silicon carbide light triggered thyristor for low loss
Hole-transmission enhancement in 4H-silicon carbide light triggered thyristor for low loss
复制标题
4H 碳化硅光触发晶闸管的空穴传输增强技术可实现低损耗
DOI：
10.1088/1361-6641/abce8b
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发表时间：
2020-02
影响因子：
1.9
通讯作者：
Xu Bei
中科院分区：
文献类型：
--
作者：
Wang Xi;Pu Hongbin;Hu Jichao;Liu Qing;Chen Chunlan;Xu Bei
在本文中，使用新思科技Sentaurus TCAD对一种具有n型阻断基区的20 kV碳化硅（SiC）光触发晶闸管（LTT）进行了模拟。为了降低功耗，一种通过电场增强空穴传输的方法……
In this paper, a 20 kV silicon carbide (SiC) light triggered thyristor (LTT) with n-type blocking base is simulated using Synopsys Sentaurus TCAD. In order to reduce the power dissipation, a method that enhances the hole-transmission through electric field induced by gradual doping profile in the n-buffer layer is proposed. The results indicate that the method enhancing the hole-transmission is effective in reducing the power loss of SiC LTT with n-type blocking base. By changing the doping profile of n-buffer layer from uniform to gradual, both on-state loss and switching loss are efficiently reduced. Compared to the conventional SiC LTT with 2.5 μm thick n-buffer layer, when the doping gradient is 1.0 × 1021 cm−4, the on-state and the switching losses of the hole-transmission enhanced SiC LTT are reduced by 34.7% and 17.9%, respectively.
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影响因子：
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作者：
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影响因子：
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影响因子：
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通讯作者：
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影响因子：
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