Dynamics of radical ions of fluorinated polymer for Extreme Ultraviolet (EUV) lithography
Dynamics of radical ions of fluorinated polymer for Extreme Ultraviolet (EUV) lithography
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用于极紫外 (EUV) 光刻的氟化聚合物自由基离子动力学
DOI:
10.1117/12.2193060
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发表时间:
2015
期刊:
影响因子:
--
通讯作者:
K. Umegaki
中科院分区:
文献类型:
--
作者:
N. Nomura;K. Okamoto;H. Yamamoto;T. Kozawa;R. Fujiyoshi;K. Umegaki
To realize extreme ultraviolet (EUV) lithography for mass production of semiconductor devices, enhancements of performance of chemically amplified resist have been still important issue. In EUV resist, radiation chemical reactions occur after irradiations of the EUV light. Dynamics of chemical intermediates of EUV resist after exposure to the ionizing radiations is important for understanding new resist design. Fluorinated resists have been developed for ArF, F2, and EUV lithography. Fluorinated polymers are effective to enhance the sensitivity of the EUV resist because F atom has higher absorptivity of EUV photons. However, the fluorination effect on the radiation chemical reactions in the resist has not been clarified in detail. In this study, we investigated the dynamics of radical ions of fluorinated polymers (FPs) by pulse radiolysis method and quantum chemical calculations to clarify the reaction mechanism for EUV lithography.
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DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
Naoya Nomura;Kazumasa Okamoto;Hiroki Yamamoto;Takahiro Kozawa;Ryoko Fujiyoshi;Kikuo Umegaki,
通讯作者:
Kikuo Umegaki,
影响因子:
1.5
作者:
N. Nomura;K. Okamoto;Hiroki Yamamoto;T. Kozawa;R. Fujiyoshi;K. Umegaki
通讯作者:
K. Umegaki
DOI:
--
发表时间:
2006
期刊:
Journal of Vacuum Science &. Technology B. 24
影响因子:
--
作者:
Hiroki Yamamoto;Takahiro Kozawa;Kazumasa Okamoto;Akinori Saeki;Seiichi Tagawa;Tomoyuki Ando;Mitsuru Sato;Hiroji Komano
通讯作者:
Hiroji Komano
影响因子:
2.9
作者:
K. Okamoto;T. Kozawa;Y. Yoshida;S. Tagawa
通讯作者:
S. Tagawa
DOI:
10.1007/b14099
发表时间:
2005
期刊:
--
影响因子:
--
作者:
Hiroshi Ito;J. Marty;Monique Mauzak
通讯作者:
Monique Mauzak