Insight into CO2 Etching Behavior for Efficiently Nanosizing Graphene
Insight into CO2 Etching Behavior for Efficiently Nanosizing Graphene
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深入了解有效纳米化石墨烯的 CO2 蚀刻行为
DOI：
10.1002/admi.201601065
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发表时间：
2017-05
影响因子：
5.4
通讯作者：
Haibo Ruan
中科院分区：
文献类型：
--
作者：
Xue Yang;Baoshan Hu;Yan Jin;Wenbin Zhao;Zhengtang Luo;Zhisong Lu;Fang Liang;Haibo Ruan
在催化金属表面上的石墨烯的化学蚀刻在石墨烯微结构的纳米化中具有很大的潜力，从而调节其性质。在此，已经证明气态CO2可以有效地蚀刻通过用Cu箔表面催化的化学气相沉积生长的单层石墨烯膜。在蚀刻过程中，CO2蚀刻速率单调地依赖于CO2流量和蚀刻温度，并且比通常用于石墨烯图案化的H2蚀刻快。此外，通过CO2蚀刻得到的石墨烯片保持了原来的高结晶度并且没有被氧化。此外，可以实现石墨烯薄片的相邻边缘之间的120°角和六边形形态，用于纳米结构石墨烯的潜在形状调节，这类似于H2的各向异性蚀刻。这些结果表明，在金属表面上的CO2蚀刻可以为纳米结构石墨烯材料的精确制造提供有前途的策略。
Chemical etching of graphene over catalytic metal surface holds great potential in nanosizing the graphene microstructure and thus modulating its properties. Herein, it has been demonstrated that gaseous CO2 can efficiently etch the monolayer graphene film grown by chemical vapor deposition catalyzed with the surface of Cu foil. During the etching process, the CO2 etching rate is monotonously dependent on the CO2 flowrate and the etching temperature, and is faster than the H2 etching which has been usually employed for the graphene patterning. Moreover, the resultant graphene flakes by the CO2 etching remain the originally high crystallinity and are free of being oxidized. Also, a 120° angle between the neighboring edges and hexagonal morphology of graphene flakes can be realized for the potential shape regulation of nanostructured graphene, which is similar as the anisotropic etching of H2. These results illustrate that the CO2 etching over the metal surface can provide a promising strategy for the precisely fabrication of nanostructured graphene materials.
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影响因子：
17.1
作者：
A. Strudwick;N. Weber;M. Schwab;Michel Kettner;R. Weitz;J. Wünsch;K. Müllen;H. Sachdev
通讯作者：
A. Strudwick;N. Weber;M. Schwab;Michel Kettner;R. Weitz;J. Wünsch;K. Müllen;H. Sachdev
影响因子：
29.4
作者：
P. Solís-Fernández;Kazuma Yoshida;Yui Ogawa;M. Tsuji;H. Ago
通讯作者：
P. Solís-Fernández;Kazuma Yoshida;Yui Ogawa;M. Tsuji;H. Ago
影响因子：
3.3
作者：
Childres, Isaac;Jauregui, Luis A.;Chen, Yong P.
通讯作者：
Chen, Yong P.
影响因子：
2.9
作者：
Cabrera-Sanfelix, Pepa
通讯作者：
Cabrera-Sanfelix, Pepa
影响因子：
10.9
作者：
H. Ago;Yasumichi Kayo;P. Solís-Fernández;Kazuma Yoshida;M. Tsuji
通讯作者：
H. Ago;Yasumichi Kayo;P. Solís-Fernández;Kazuma Yoshida;M. Tsuji