Monolayer WS(2) Nanopores for DNA Translocation with Light-Adjustable Sizes.
Monolayer WS(2) Nanopores for DNA Translocation with Light-Adjustable Sizes.
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DOI：
10.1021/acsnano.6b08028
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发表时间：
2017-02-28
期刊：
影响因子：
17.1
通讯作者：
Drndić M
中科院分区：
文献类型：
--
作者：
Danda G;Masih Das P;Chou YC;Mlack JT;Parkin WM;Naylor CH;Fujisawa K;Zhang T;Fulton LB;Terrones M;Johnson AT;Drndić M
二维材料有着广泛的应用前景，也是探测低维系统物理的实验平台。二硫化钨（WS 2）单层在可见光范围内具有直接带隙和强光致发光（PL），为先进的光电应用开辟了可能性。在这里，我们报告的实现二维纳米孔悬浮单层WS 2膜，允许在离子电流测量的电气和光学响应。一个聚焦的电子束被用来制造纳米孔的WS 2膜悬浮在硅基芯片，其特征在于使用PL光谱和像差校正的高分辨率扫描透射电子显微镜。据观察，悬浮的WS 2单层的PL强度比衬底支撑的单层的PL强度强约10-15倍，并且低剂量扫描透射电子显微镜观察和钻孔保留了孔周围WS 2的PL信号。我们确定，这样的纳米孔允许离子电导和DNA易位。我们还证明，在溶液中的低功率激光照射下，WS 2纳米孔的尺寸以约0.2-0.4 nm/s的有效速率缓慢生长，从而允许使用短光脉冲进行原子控制的纳米孔尺寸。
Two-dimensional materials are promising for a range of applications, as well as testbeds for probing the physics of low-dimensional systems. Tungsten disulfide (WS2) monolayers exhibit a direct band gap and strong photoluminescence (PL) in the visible range, opening possibilities for advanced optoelectronic applications. Here, we report the realization of two-dimensional nanometersize pores in suspended monolayer WS2 membranes, allowing for electrical and optical response in ionic current measurements. A focused electron beam was used to fabricate nanopores in WS2 membranes suspended on silicon-based chips and characterized using PL spectroscopy and aberration-corrected high-resolution scanning transmission electron microscopy. It was observed that the PL intensity of suspended WS2 monolayers is ~10–15 times stronger when compared to that of substrate-supported monolayers, and low-dose scanning transmission electron microscope viewing and drilling preserves the PL signal of WS2 around the pore. We establish that such nanopores allow ionic conductance and DNA translocations. We also demonstrate that under low-power laser illumination in solution, WS2 nanopores grow slowly in size at an effective rate of ~0.2–0.4 nm/s, thus allowing for atomically controlled nanopore size using short light pulses.
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影响因子：
64.8
作者：
通讯作者：
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二维半导体中的缺陷激活光致发光：束缚激子、带电激子和自由激子之间的相互作用
影响因子：
4.6
作者：
Tongay, Sefaattin;Suh, Joonki;Ataca, Can;Fan, Wen;Luce, Alexander;Kang, Jeong Seuk;Liu, Jonathan;Ko, Changhyun;Raghunathanan, Rajamani;Zhou, Jian;Ogletree, Frank;Li, Jingbo;Grossman, Jeffrey C.;Wu, Junqiao
通讯作者：
Wu, Junqiao
影响因子：
10.8
作者：
Merchant, Christopher A.;Healy, Ken;Drndic, Marija
通讯作者：
Drndic, Marija
影响因子：
17.1
作者：
Kim, Min Su;Yun, Seok Joon;Kim, Jeongyong
通讯作者：
Kim, Jeongyong
DOI：
10.1088/0022-3719/9/12/029
发表时间：
1976-01-01
期刊：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS
影响因子：
--
作者：
BEAL, AR;LIANG, WY
通讯作者：
LIANG, WY