Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and Al(x)O(x) Guard Ring Structure.
Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and Al(x)O(x) Guard Ring Structure.
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氢等离子体表面处理和 AlxOx 保护环结构的 AZO/Si 肖特基势垒二极管的电特性增强
DOI：
10.3390/ma11010090
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发表时间：
2018-01-08
期刊：
影响因子：
--
通讯作者：
Liu J
中科院分区：
文献类型：
--
作者：
Li CY;Cheng MY;Houng MP;Yang CF;Liu J
本研究利用氢等离子体处理硅表面及AlxOx保护环，设计并制作了AZO/n-Si肖特基势垒二极管。Si表面表现出较少的界面缺陷后的清洗过程后，随后与30 W的H2等离子体处理，提高了以下形成的SBD的开关性能。快速热退火实验也保持在400 °C以提高SBD的击穿电压。通过原子层沉积（ALD）在SBD的侧面沉积AlxOx保护环结构，也抑制了SBD的边缘效应。实验结果表明，AlxOx保护环的加入降低了反向漏电流，提高了击穿电压。所开发的二极管及其制备工艺可用于实现高击穿电压（>200 V）、低反向漏电流密度（≤72 μA/mm2@100 V）和肖特基势垒高度（1.074 eV）的SBD。
In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm2@100 V), and a Schottky barrier height of 1.074 eV.
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