Effect of Ar in the source gas on the microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD
Effect of Ar in the source gas on the microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD
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源气中Ar对等离子体增强CVD沉积微晶硅薄膜微观结构和光电性能的影响
DOI：
10.1016/j.apsusc.2010.08.068
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发表时间：
2010-12
影响因子：
6.7
通讯作者：
中科院分区：
文献类型：
--
作者：
采用等离子体增强化学气相沉积（PECVD）技术，在H2或H2+Ar中稀释硅烷，制备了氢化微晶硅薄膜。用拉曼散射光谱、X射线衍射和傅里叶变换红外光谱对硅薄膜的微结构进行了分析。通过紫外-可见光谱进行了光学表征。据发现，在稀释气体中的Ar的添加有效地提高了沉积速率和结晶度，由于增强的源气体的解离和能量的去激发的Ar* 内释放的生长区。同时，随着Ar稀释度的增加，薄膜的结晶度增加，氢离子轰击减少，导致薄膜聚合，氢钝化不良，导致薄膜光学带隙变宽，缺陷态增多。随着Ar稀释度的增加，薄膜的吸收系数和暗电导率基本上降低，这与薄膜的禁带宽度和缺陷数量增加有关。激活能随Ar稀释度的增加或氢稀释度的减少而增加，这是由于缺陷态的增加导致费米能级的下降。
Hydrogenated microcrystalline silicon films have been prepared by plasma-enhanced chemical vapor deposition technique using silane diluted in H2or H2+Ar. The microstructures for silicon films have been evaluated by Raman scattering spectroscopy, X-ray diffraction and Fourier-transform infrared spectroscopy. Optical characterization has been done by UV–vis spectroscopy. It is found that the addition of Ar in diluent gases efficiently improves the deposition rate and crystallinity due to an enhanced dissociation of the source gas and the energy of deexcitation of Ar* released within the growth zone. Meanwhile, the enhanced crystallinity and the reducing of hydrogen ion bombardment with increasing Ar dilution lead to the polymerization and also a bad passivation of the hydrogen which cause the widening of the optical gap and increase of defect states in the μc-Si films. The absorption coefficient and dark conductivity are found to decrease basically with increasing Ar dilution corresponding to the widening optical gap and more defects. That the activation energy increases with increasing Ar dilution or decreasing hydrogen dilution is due to the fact that more defect states lead to a pulling down of the Fermi level.
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影响因子：
3.2
作者：
A. Nakajima;Y. Sugita;K. Kawamura;H. Tomita;N. Yokoyama
通讯作者：
A. Nakajima;Y. Sugita;K. Kawamura;H. Tomita;N. Yokoyama
非晶硅薄膜向纳米晶硅薄膜转变过程中的微观结构和载流子传输行为评估
影响因子：
3.2
作者：
Wang, T.;Xu, J.;Chen, K. J.;Li, W.;Xu, L.;Sun, H. C.;Huang, X. F.;Song, C.;Chen, G. R.;Ma, Z. Y.;Liu, Y.
通讯作者：
Liu, Y.
影响因子：
3.5
作者：
Koyel Bhattacharya;D. Das
通讯作者：
Koyel Bhattacharya;D. Das
氩气流量对PECVD生长SiGe:H薄膜的影响
影响因子：
6.7
作者：
通讯作者：
--
影响因子：
2.1
作者：
W. Soppe;C. Devilée;M. Geusebroek;J. Loffler;H. Muffler
通讯作者：
W. Soppe;C. Devilée;M. Geusebroek;J. Loffler;H. Muffler