Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films
Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films
复制标题
非晶硅薄膜向纳米晶硅薄膜转变过程中的微观结构和载流子传输行为评估
DOI：
10.1063/1.3087500
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发表时间：
2009-03
影响因子：
3.2
通讯作者：
Liu, Y.
中科院分区：
文献类型：
--
作者：
Wang, T.;Xu, J.;Chen, K. J.;Li, W.;Xu, L.;Sun, H. C.;Huang, X. F.;Song, C.;Chen, G. R.;Ma, Z. Y.;Liu, Y.
采用等离子体增强化学气相沉积技术制备了氢化非晶硅薄膜。沉积样品在不同温度下进行热退火以获得纳米晶硅。在从非晶结构到纳米晶结构的转变过程中评估了微观结构和载流子传输行为。拉曼散射光谱和傅里叶变换红外光谱用于表征微观结构和键合构型的变化。结果发现，在600℃退火温度下，氢完全从薄膜中逸出，而在700℃左右则发生结晶。纳米晶薄膜中的载流子传输特性与非晶硅薄膜中的载流子传输特性不同。非晶硅薄膜中的载流子传输受到氢逸出产生的缺陷态的强烈影响。在与温度相关的电导率结果中发现了双活化能，这可以归因于......
Hydrogenated amorphous Si thin films were prepared by plasma-enhanced chemical vapor deposition technique. As-deposited samples were thermally annealed at various temperatures to obtain nanocrystalline Si. The microstructures and carrier transport behaviors were evaluated during the transition process from amorphous to nanocrystalline structures. Raman scattering spectroscopy and Fourier-transform infrared spectroscopy were used to characterize the changes in microstructures and bonding configurations. It is found that hydrogen is completely effused from the film at the annealing temperature of 600 °C, while crystallization occurs at around 700 °C. The carrier transport characteristics in nanocrystallized films are different from those in the amorphous Si films. The carrier transport in the amorphous silicon films is strongly influenced by the defect states resulting from the effusion of hydrogen. The dual activation energies are found in temperature-dependent conductivity results which can be attributed ...
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影响因子：
3.2
作者：
H. Mavi;A. Shukla;S. C. Abbi;K. Jain
通讯作者：
H. Mavi;A. Shukla;S. C. Abbi;K. Jain
影响因子：
4
作者：
Sanju Gupta;R. Katiyar;G. Morell;S. Z. Weisz;I. Balberg
通讯作者：
Sanju Gupta;R. Katiyar;G. Morell;S. Z. Weisz;I. Balberg
DOI：
10.1080/13642819308220136
发表时间：
1993-03
期刊：
Philosophical Magazine Part B
影响因子：
--
作者：
F. Demichelis;C. Pirri;E. Tresso
通讯作者：
F. Demichelis;C. Pirri;E. Tresso
影响因子：
3.2
作者：
A. Nakajima;Y. Sugita;K. Kawamura;H. Tomita;N. Yokoyama
通讯作者：
A. Nakajima;Y. Sugita;K. Kawamura;H. Tomita;N. Yokoyama
影响因子：
3.2
作者：
A. Ghosh;T. McMahon;E. Rock;H. Wiesmann
通讯作者：
A. Ghosh;T. McMahon;E. Rock;H. Wiesmann