Measurement of the relative response of small-electrode CMOS sensors at Diamond Light Source
Measurement of the relative response of small-electrode CMOS sensors at Diamond Light Source
复制标题
钻石光源下小电极 CMOS 传感器相对响应的测量
DOI：
10.1016/j.nima.2019.163381
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Mironova M
中科院分区：
文献类型：
--
作者：
Mironova M
本文概述了在小型MALTA耗尽单片像素传感器原型的辐射损伤的影响的调查结果。在金刚石光源处使用微焦点X射线束进行测量，该微焦点X射线束以2 μ m的步长扫描整个装置的表面。这允许直接测量具有高统计数据的像素内光子响应。考虑了三种像素设计变化：一种是标准连续n层布局和前端，另一种是超深p阱和n间隙设计，前端经过修改。测量了五个芯片：一个未辐照，一个中子辐照，三个质子辐照。标准设计显示，1E15 N当量scincm 2照射后像素响应下降12%。对于两种新设计，像素响应在照射后没有显著降低。观察到在高偏置电压下像素响应的降低。对芯片中的电荷共享进行了量化，发现与预期一致。
This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA depleted monolithic pixel sensor prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 μ m steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous n− layer layout and front-end, and extra deep p-well and n− gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated. The standard design showed a decrease of 12% in pixel response after irradiation to 1e15 n eq∕ cm 2. For the two new designs the pixel response did not decrease significantly after irradiation. A decrease of pixel response at high biasing voltages was observed. The charge sharing in the chip was quantified and found to be in agreement with expectations.
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