Silicon enhances plant resistance to Fusarium wilt by promoting antioxidant potential and photosynthetic capacity in cucumber (Cucumis sativus L.).
Silicon enhances plant resistance to Fusarium wilt by promoting antioxidant potential and photosynthetic capacity in cucumber (Cucumis sativus L.).
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硅通过促进黄瓜 (Cucumis sativus L.) 的抗氧化潜力和光合能力来增强植物对枯萎病的抵抗力
DOI：
10.3389/fpls.2022.1011859
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发表时间：
2022
影响因子：
5.6
通讯作者：
中科院分区：
文献类型：
--
作者：
黄瓜枯萎病（Fusarium oxysporum f. sp. cucumerinum, Fo）是一种严重影响全球黄瓜生产的土传病害，特别是在温室单作条件下。硅（Si）在提高作物对枯萎病的抗性中起着重要作用，但其潜在的机制在很大程度上尚不清楚。本研究表明，在马铃薯葡萄糖琼脂（PDA）培养7 d时，3 mmol·l-1 Si对尖孢镰刀菌菌丝生长的抑制效果最好。随后，在土壤培养条件下，研究了外源硅处理对黄瓜枯萎病的发生及其机理。Si+Fo处理的株高、茎粗、根长和根系活力分别比Fo处理显著提高了39.53%、94.87%、74.32%和95.11%。重要的是，与Fo处理相比，Si+Fo处理的控制效率为69.31%。与Fo相比，Si + Fo处理黄瓜根系过氧化物酶（POD）、过氧化氢酶（CAT）和抗坏血酸过氧化物酶（APX）活性分别显著提高了148.92%、26.47%和58.54%，H2O2、丙二醛（MDA）含量分别显著降低了21.67%、59.67%和38.701%。与Fo处理相比，Si+Fo处理的净光合速率（Pn）、气孔导度（Gs）、蒸腾速率（Tr）、RuBisCO最大羧化速率（Vcmax）、RuBP最大再生速率（Jmax）、核酮糖-1,5-二磷酸羧化酶（RuBisCO）、果糖-1,6-二磷酸酶（FBPase）、甘油醛-3-磷酸脱氢酶（GAPDH）活性以及FBPA、TPI、SBPase和FBPase的表达均显著升高。此外，与只接种磷相比，硅缓解了气孔关闭，提高了内源硅含量。研究结果表明，施用外源硅通过刺激黄瓜叶片抗氧化系统、光合能力和气孔运动来提高黄瓜对枯萎病的抗性。本研究对硅在黄瓜抗枯萎病中的应用潜力有了新的认识，为硅在温室条件下黄瓜生产中的应用提供了广阔的前景。
Fusarium wilt, caused by Fusarium oxysporum f. sp. cucumerinum (Fo), is a severe soil-borne disease affecting cucumber production worldwide, particularly under monocropping in greenhouses. Silicon (Si) plays an important role in improving the resistance of crops to Fusarium wilt, but the underlying mechanism is largely unclear. Here, an in vitro study showed that 3 mmol·l-1 Si had the best inhibitory effect on the mycelial growth of F. oxysporum in potato dextrose agar (PDA) culture for 7 days. Subsequently, the occurrence of cucumber wilt disease and its mechanisms were investigated upon treatments with exogenous silicon under soil culture. The plant height, stem diameter, root length, and root activity under Si+Fo treatment increased significantly by 39.53%, 94.87%, 74.32%, and 95.11% compared with Fo only. Importantly, the control efficiency of Si+Fo was 69.31% compared with that of Fo treatment. Compared with Fo, the activities of peroxidase (POD), catalase (CAT), and ascorbate peroxidase (APX) significantly increased by 148.92%, 26.47%, and 58.54%, while the contents of H2O2, , and malondialdehyde (MDA) notably decreased by 21.67%, 59.67%, and 38.701%, respectively, in roots of cucumber plants treated with Si + Fo. Compared with Fo treatment, the net photosynthesis rate (Pn), stomatal conductance (Gs), transpiration rate (Tr), maximum RuBisCO carboxylation rates (Vcmax), maximum RuBP regeneration rates (Jmax), and activities of ribulose-1,5-bisphosphate carboxylase (RuBisCO), fructose-1,6-bisphosphatase (FBPase), and glyceraldehyde-3-phosphate dehydrogenase (GAPDH) and the expression of FBPA, TPI, SBPase, and FBPase in Si+Fo treatment increased significantly. Furthermore, Si alleviated stomatal closure and enhanced endogenous silicon content compared with only Fo inoculation. The study results suggest that exogenous silicon application improves cucumber resistance to Fusarium wilt by stimulating the antioxidant system, photosynthetic capacity, and stomatal movement in cucumber leaves. This study brings new insights into the potential of Si application in boosting cucumber resistance against Fusarium wilt with a bright prospect for Si use in cucumber production under greenhouse conditions.
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影响因子：
5.5
作者：
Hoffmann J;Berni R;Hausman JF;Guerriero G
通讯作者：
Guerriero G
影响因子：
6.5
作者：
Ahammed, Golam Jalal;Yang, Youxin
通讯作者：
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影响因子：
2.2
作者：
Elshahawy, Ibrahim E.;Osman, Samira A.;Abd-El-Kareem, Farid
通讯作者：
Abd-El-Kareem, Farid
影响因子：
1.4
作者：
Isack, Yochai;Benichis, Marina;Gamliel, A.
通讯作者：
Gamliel, A.
影响因子：
2.7
作者：
Kurabachew, Henok;Stahl, Frank;Wydra, Kerstin
通讯作者：
Wydra, Kerstin