Ion-Induced Surface Reactions and Deposition of Trimethyl(methylcyclopentadienyl)platinum(IV)

Ion-Induced Surface Reactions and Deposition of Trimethyl(methylcyclopentadienyl)platinum(IV)
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离子诱导表面反应和三甲基(甲基环戊二烯基)铂(IV)的沉积

DOI:
10.1021/acs.jpcc.2c05255
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发表时间:
2022
期刊:
The Journal of Physical Chemistry C
影响因子:
--
通讯作者:
Fairbrother, D. Howard
Fairbrother, D. Howard
中科院分区:
--
文献类型:
--
作者:
Abdel-Rahman, Mohammed K.;Eckhert, Patrick M.;Fairbrother, D. Howard

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使用Me 3 PtCpMe的离子束诱导沉积已被研究使用的组合的超真空(UHV)的表面科学的研究进行薄膜和扫描电子显微镜(SEM)的数据下创建的稳态沉积条件下的结构。X射线光电子能谱(XPS)的数据从单层厚膜的Me 3 PtCpMe暴露于1.2-4 keV的Ar离子表明,沉积开始由能量转移从入射离子吸附的前体分子导致的损失的所有四个甲基基团和可能的分解的Cp环,产生存款与PtC 5化学计量。这与聚焦电子束诱导处理(FEBIP)形成对比,在FEBIP中,沉积是由于电子激发和仅一个Pt− CH 3基团的损失而发生的。通过比较伴随Me 3 PtCpMe的离子或电子诱导分解的Pt(IV)还原速率,确定离子诱导沉积反应截面大约大两个数量级。由于这种较高的反应效率,离子辐照伴随着一些双分子甲基自由基偶联产生乙烷。超高真空的研究还表明,离子诱导的沉积之后,溅射的铂和碳原子在可比的速度。超高真空研究提供的这些基本见解为理解在稳态沉积条件下形成的结构上获得的SEM数据提供了基础。特别是,观察到的“环状”沉积物可以合理化溅射在中心的沉积区域中的Ar+通量是足够高的,以产生一个受限制的制度,而沉积发生在离子限制制度在周边的沉积区域中的Ar+通量较低。这些结果表明,使用数据的实用程序从超高真空表面科学的方法,以更好地了解离子束诱导沉积的有机金属前体形成的沉积物的组成和反应条件的影响。
Ion-beam-induced deposition using Me3PtCpMe has been studied using a combination of ultrahigh vacuum (UHV) surface science studies performed on thin films and scanning electron microscopy (SEM) data of structures created under steady-state deposition conditions. X-ray photoelectron spectroscopy (XPS) data from monolayer thick films of Me3PtCpMe exposed to 1.2–4 keV Ar ions indicate that deposition is initiated by energy transfer from the incident ions to adsorbed precursor molecules leading to the loss of all four methyl groups and the likely decomposition of the Cp ring, yielding a deposit with a PtC5stoichiometry. This contrasts with focused electron-beam-induced processing (FEBIP), where deposition occurs as a result of electron excitation and the loss of only one Pt−CH3group. By comparing the rate of Pt(IV) reduction that accompanies either ion- or electron-induced decomposition of Me3PtCpMe, it was determined that ion-induced deposition reaction cross sections are approximately two orders of magnitude greater. As a result of this higher reaction efficiency, ion irradiation was accompanied by some bimolecular methyl radical coupling to produce ethane. UHV studies also revealed that ion-induced deposition was followed by sputtering of Pt and C atoms at comparable rates. These fundamental insights provided by the UHV studies provided the basis to understand SEM data obtained on structures that formed under steady-state deposition conditions. In particular, the observation of “ring-like” deposits could be rationalized by sputtering in the center of the deposition region where the Ar+flux was sufficiently high to produce a precursor-limited regime, while deposition occurred in ion-limited regimes at the periphery of the deposition region where the Ar+flux was lower. These results demonstrate the utility of using data from a UHV surface science approach to better understand the composition and influence of reaction conditions on deposits formed during ion-beam-induced deposition of organometallic precursors.
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