Optical property investigation of SiGe nanocrystals formed by electrochemical anodization
Optical property investigation of SiGe nanocrystals formed by electrochemical anodization
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电化学阳极氧化形成的 SiGe 纳米晶的光学性质研究
DOI：
10.1016/j.apsusc.2011.07.141
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发表时间：
2011-10
影响因子：
6.7
通讯作者：
Lai, H. K.
中科院分区：
文献类型：
--
作者：
Pan, S. W.;Zhou, Bi;Chen, S. Y.;Li, Cheng;Huang, Wei;Lai, H. K.
本文报道了利用电化学阳极氧化法（ECA）对真空化学气相沉积（UHVCVD）生长的SiGe层进行电化学阳极氧化（ECA）制备的SiGe纳米晶的光学性质研究。在室温下，具有较高Ge含量的SiGe NC表现出与Si NC相比的光致发光（PL）峰的红移。结果发现，表面的化学成分，密度，和尺寸的SiGe NC是非常敏感的退火条件。通过PL、FTIR和XPS等光谱测试，揭示了PL峰跃迁的机理。结果表明，光致发光峰的位置主要由两个因素决定，即界面态密度和SiGe纳米晶的尺寸。结果表明，界面态密度越高，峰位的红移越显著。而尺寸越小，量子尺寸效应越显著，导致PL峰位置蓝移。
We report on the optical property investigation of SiGe nanocrystals (NCs) prepared by electrochemical anodization (ECA) of SiGe layer grown by ultrahigh vacuum chemical vapor deposition (UHVCVD). At room temperature, SiGe NCs with higher Ge content demonstrate a redshift of the photoluminescence (PL) peak compared to Si NCs. It was found that the surface chemical composition, density, and the size of the SiGe NCs were very sensitive to the annealing conditions. Various spectroscopy measurements such as PL, FTIR, and XPS have been carried out to reveal the mechanism of the PL peak transition. The results indicated that the PL peak position was determined by two major factors, namely, interface state density and the size of SiGe NCs. It was shown that the higher the interface state density, the more significant the redshift of the peak position. While the smaller the size of the SiGe NCs, the more significant the quantum size effects become, resulting in the blueshift of the PL peak position.
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DOI：
10.1103/physrevb.52.11898
发表时间：
1995-10
期刊：
Physical review. B, Condensed matter
影响因子：
--
作者：
M. Schoisswohl;J. Cantin;Maria Chamarro;H. Bardeleben;T. Morgenstern;E. Bugiel;W. Kissinger;R. C. Andreu
通讯作者：
M. Schoisswohl;J. Cantin;Maria Chamarro;H. Bardeleben;T. Morgenstern;E. Bugiel;W. Kissinger;R. C. Andreu
影响因子：
3.9
作者：
T. D. Caño;L. F. Sanz;P. Martin;M. Avella;J. Jiménez;Andrés Rodríguez;J. Sangrador;T. Rodríguez;V. Torres-Costa;R. Martín-Palma;J. M. Martínez-Duart
通讯作者：
T. D. Caño;L. F. Sanz;P. Martin;M. Avella;J. Jiménez;Andrés Rodríguez;J. Sangrador;T. Rodríguez;V. Torres-Costa;R. Martín-Palma;J. M. Martínez-Duart
影响因子：
4
作者：
S. Gardelis;J. Rimmer;P. Dawson;B. Hamilton;R. Kubiak;T. Whall;E. Parker
通讯作者：
S. Gardelis;J. Rimmer;P. Dawson;B. Hamilton;R. Kubiak;T. Whall;E. Parker
影响因子：
2.8
作者：
K. Toshikiyo;Masakazu Tokunaga;S. Takeoka;M. Fujii;S. Hayashi
通讯作者：
K. Toshikiyo;Masakazu Tokunaga;S. Takeoka;M. Fujii;S. Hayashi
影响因子：
3.2
作者：
M. Schoisswohl;M. Rosenbauer;J. Cantin;S. Lebib;H. Bardeleben;J. Fave;J. Cernogora;G. Amato;A. Rossi
通讯作者：
M. Schoisswohl;M. Rosenbauer;J. Cantin;S. Lebib;H. Bardeleben;J. Fave;J. Cernogora;G. Amato;A. Rossi