Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation
Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation
复制标题
4H-SiC CMOS 电路演示，该电路由通过超高温栅极氧化制造的均衡良好的 n 沟道和 p 沟道 MOSFET 组成
DOI：
10.35848/1882-0786/ac1c43
复制
发表时间：
2021
影响因子：
2.3
通讯作者：
Heiji Watanabe
中科院分区：
文献类型：
--
作者：
K. Moges;T. Hosoi;T. Shimura;Heiji Watanabe
在4H-SiC(0001)衬底上成功制备了具有陡峭电压转移特性(VTC)的互补金属氧化物半导体反相器。即使在没有MOS界面氮化的情况下，通过1600°C的超高温栅氧化(HTO)在降低氧分压的情况下实现了平衡的n沟道场效应晶体管和p沟道场效应晶体管。通过随后在1200℃进行成形气体退火(FGA)，改善了n沟道和p沟道碳化硅金属氧化物半导体场效应晶体管的性能，得到了基本对称的VTC，磁滞可以忽略不计。从23级环形振荡器在较宽的温度范围内稳定和改进的性能验证了高温下HTO和随后的FGA的效果。
Complementary metal-oxide-semiconductor inverters featuring steep voltage-transfer characteristics (VTC) were successfully fabricated on 4H-SiC(0001) substrates. Even without nitridation of the MOS interfaces, well-balanced n- and p-channel field-effect transistors were realized by means of ultrahigh-temperature gate oxidation (HTO) at 1600 °C under reduced oxygen partial pressure. Improvements in the performances of both n- and p-channel SiC metal-oxide-semiconductor field-effect transistors were achieved by subsequently performing forming gas annealing (FGA) at 1200 °C, leading to mostly symmetric VTC with negligible hysteresis. The effect of HTO and subsequent FGA at high temperatures was verified from the stable and improved performance of 23-stage ring oscillators over a wide temperature range.
影响因子：
4.9
作者：
Okamoto, Dai;Yano, Hiroshi;Fuyuki, Takashi
通讯作者：
Fuyuki, Takashi
实际温度下 SiC (0001)/SiO2 系统中碳缺陷的结构和能量学：SiC、SiO2 及其界面处的缺陷
影响因子：
3.2
作者：
Kobayashi Takuma;Matsushita Yu-ichiro
通讯作者：
Matsushita Yu-ichiro
通过不同氧分压的氧化后 H2O 退火工艺显着降低 SiC PMOSFET 的界面陷阱密度
DOI：
10.35848/1347-4065/ab8e1f
发表时间：
2020
期刊：
Jpn. J. Appl. Phys.
影响因子：
--
作者：
Jun Koyanagi;Mizuki Nishida and Koji Kita
通讯作者：
Mizuki Nishida and Koji Kita