Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE
Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE
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L-MBE脉冲激光烧蚀和沉积ZnO薄膜的研究
DOI：
10.1007/s11431-007-0035-z
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发表时间：
2007-06
期刊：
影响因子：
--
通讯作者：
Yang XiaoDong
中科院分区：
文献类型：
--
作者：
Zhang JingWen;Zhu ChangChun;Xu QingAn;He YongNing;Hou Xun;Yang XiaoDong
ZnO作为一种宽带隙半导体材料，近年来已成为紫外光电半导体领域的一个新的研究热点。激光分子束外延（L-MBE）是一种非常有效的从烧结陶瓷靶上生长氧化锌薄膜的方法。在L-MBE过程中，采用KrF激光脉冲在超高真空中烧蚀高纯ZnO陶瓷靶，制备了存款ZnO薄膜。结果表明，L-MBE法制备ZnO薄膜的沉积速率远低于常规脉冲激光沉积法（PLD）。根据ZnO薄膜生长过程中的实验现象和纳秒脉冲激光烧蚀ZnO陶瓷靶的热控制机理，提出的有效烧蚀时间可以解释L-MBE法ZnO薄膜沉积速率很低的原因。分析了ZnO薄膜生长的独特动力学机制。沉积物种的高能量和薄膜的低生长速率都有利于在低温下L-MBE生长高结晶度的ZnO薄膜。
ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.
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影响因子：
2.1
作者：
P. Zu;Zikang Tang;George C. K. Wong;M. Kawasaki;A. Ohtomo;H. Koinuma;Y. Segawa
通讯作者：
P. Zu;Zikang Tang;George C. K. Wong;M. Kawasaki;A. Ohtomo;H. Koinuma;Y. Segawa
影响因子：
41.2
作者：
Tsukazaki, A;Ohtomo, A;Kawasaki, M
通讯作者：
Kawasaki, M
DOI：
10.1116/1.572219
发表时间：
1983-10
期刊：
Journal of Vacuum Science and Technology
影响因子：
--
作者：
H. Sankur;J. Cheung
通讯作者：
H. Sankur;J. Cheung
DOI：
10.1002/1521-3951(199708)202:2
发表时间：
1997-08
影响因子：
1.6
作者：
Y. Segawa;A. Ohtomo;M. Kawasaki;H. Koinuma;Zikang Tang;P. Yu;G. Wong
通讯作者：
Y. Segawa;A. Ohtomo;M. Kawasaki;H. Koinuma;Zikang Tang;P. Yu;G. Wong
DOI：
10.1016/s0026-2692(03)00252-0
发表时间：
2004-04
期刊：
Microelectron. J.
影响因子：
--
作者：
Yong-ning He;Changchun Zhu;Jing-wen Zhang
通讯作者：
Yong-ning He;Changchun Zhu;Jing-wen Zhang