A Substitution for the High-k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure
A Substitution for the High-k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure
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AlGaN/GaN 金属-绝缘体-半导体异质结构中高 k 电介质的替代品
DOI：
10.1088/0256-307x/29/5/057702
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发表时间：
2012-05
影响因子：
3.5
通讯作者：
Jiang Wen-Hai
中科院分区：
文献类型：
--
作者：
Kong Yue-Chan;Xue Fang-Shi;Zhou Jian-Jun;Li Liang;Chen Chen;Jiang Wen-Hai
Paraelectric state ferroelectric material is proposed as a novel substitution for the conventional high-k dielectric used in AlGaN/GaN metal-insulator-semiconductor (MIS) field-effect transistors. Its superior potential for improving device transconductance is due to its unique switchable polar nature. By self-consistent calculation involving the switchable polarization of the paraelectric, the 2DEG properties and C—V characteristics are investigated and compared for the novel AlGaN/GaN metal-paraelectric-semiconductor (MPS) structure and an equivalent conventional MIS structure. It is shown that owing to the paraelectric polarization, the gate control of the 2DEG density is remarkably enhanced in the MPS structure and the gate capacitance is significantly improved with a smaller threshold voltage. The self-consistent polarization of the paraelectric in the MPS structure is non-linearly dependent on the saturated polarization, which implies an optimum saturated polarization of 5–10 μC/cm2 for the paraelectric.
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影响因子：
4
作者：
M. Khan;X. Hu;A. Tarakji;G. Simin;J. Yang;R. Gaska;M. Shur
通讯作者：
M. Khan;X. Hu;A. Tarakji;G. Simin;J. Yang;R. Gaska;M. Shur
影响因子：
4
作者：
Gaska, R;Shur, MS;Pala, N
通讯作者：
Pala, N
DOI：
10.1007/s00339-008-4983-3
发表时间：
2009-06
期刊：
Applied Physics A
影响因子：
--
作者：
Y. Kong;F. Xue;J. J. Zhou-J.;Liang Li;C. Chen;Yuanxun Li
通讯作者：
Y. Kong;F. Xue;J. J. Zhou-J.;Liang Li;C. Chen;Yuanxun Li
影响因子：
4
作者：
Liu, C;Chor, EF;Tan, LS
通讯作者：
Tan, LS
影响因子：
1.5
作者：
M. Ochiai;M. Akita;Y. Ohno;S. Kishimoto;K. Maezawa;T. Mizutani
通讯作者：
M. Ochiai;M. Akita;Y. Ohno;S. Kishimoto;K. Maezawa;T. Mizutani