GaN-based MSM photovoltaic ultraviolet detector structure modeling and its simulation
GaN-based MSM photovoltaic ultraviolet detector structure modeling and its simulation
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GaN基MSM光伏紫外探测器结构建模及其仿真
DOI:
10.1088/1674-4926/32/3/034005
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发表时间:
2011-03
期刊:
影响因子:
--
通讯作者:
Miao, Guoqing
中科院分区:
文献类型:
--
作者:
Chen, Yiren;Song, Hang;Li, Dabing;Sun, Xiaojuan;Li, Zhiming;Jiang, Hong;Miao, Guoqing
Based on the principles of metal—semiconductor—metal Schottky barrier photodetectors (MSM-PD), using the carrier rate equations, the circuit simulation model of a GaN-based MSM photovoltaic ultraviolet detector is constructed through an appropriately equi
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DOI:
--
发表时间:
2007
期刊:
Chinese Journal of Lasers
影响因子:
--
作者:
Lu Yu-tian
通讯作者:
Lu Yu-tian
DOI:
10.1007/bf02778393
发表时间:
1994-10
期刊:
Journal of Electronics (China)
影响因子:
--
作者:
Chen Wei-you;Liu Shiyong
通讯作者:
Chen Wei-you;Liu Shiyong
影响因子:
3.1
作者:
E. Sano
通讯作者:
E. Sano
DOI:
--
发表时间:
2004
期刊:
Chinese Journal of Lasers
影响因子:
--
作者:
Ma Li-qin
通讯作者:
Ma Li-qin