A Novel Application of GaAs Photoconductive Semiconductor Switch in Triggering Spark Gap

A Novel Application of GaAs Photoconductive Semiconductor Switch in Triggering Spark Gap
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GaAs光电导半导体开关在火花隙触发中的新应用

DOI:
10.1109/tps.2009.2012513
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发表时间:
2009-04
影响因子:
1.5
通讯作者:
--
中科院分区:
物理与天体物理3区
文献类型:
--
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基于GaAs光电导半导体开关(PCSS)和火花隙的特性,研制了一种新型组合开关。这种组合开关集成了一个传统的GaAsPCSS和一个正常的火花隙,可以在纳秒内为火花隙提供两到三倍的自击穿电压。实验中观察到,与传统的单开关相比,采用组合开关时,输出端峰值电流较大。基于转移电子效应和失控快电子模型,讨论了GaAsPCSS的开启过程和火花隙中等离子体通道的形成机制。此外,由于GaAsPCSS和火花隙之间的相互作用,当偏置电场大于锁定阈值时,体GaAsPCSS中避免了锁定效应,这表明这种组合开关可以提高GaAsPCSS在高电压下的寿命。
Based on the characteristics of the GaAs photoconductive semiconductor switch (PCSS) and the spark gap, a new combined switch is developed. The combined switch integrates a traditional GaAs PCSS and a normal spark gap, which could offer two to three times of self-breakdown voltage for the spark gap in nanoseconds. Compared with the traditional single GaAs PCSS, a higher peak current at the output terminal was observed in the experiments when the combined switch was used. Based on the transferred electron effect and the runaway fast electron model, the turn-on process of the GaAs PCSS and the mechanism for the formation of plasma channel in the spark gap are discussed. In addition, due to the interaction between the GaAs PCSS and the spark gap, lock-on effect is avoided in a bulk GaAs PCSS when the bias electric field is larger than the lock-on threshold, which indicates that this combined switch could improve the longevity of the GaAs PCSS under high applied voltage.
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