All-Printed Flexible Memristor with Metal-Non-Metal-Doped TiO(2) Nanoparticle Thin Films.
All-Printed Flexible Memristor with Metal-Non-Metal-Doped TiO(2) Nanoparticle Thin Films.
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DOI：
10.3390/nano12132289
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发表时间：
2022-07-03
期刊：
影响因子：
--
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中科院分区：
文献类型：
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A memristor is a fundamental electronic device that operates like a biological synapse and is considered as the solution of classical von Neumann computers. Here, a fully printed and flexible memristor is fabricated by depositing a thin film of metal–non-metal (chromium-nitrogen)-doped titanium dioxide (TiO2). The resulting device exhibited enhanced performance with self-rectifying and forming free bipolar switching behavior. Doping was performed to bring stability in the performance of the memristor by controlling the defects and impurity levels. The forming free memristor exhibited characteristic behavior of bipolar resistive switching with a high on/off ratio (2.5 × 103), high endurance (500 cycles), long retention time (5 × 103 s) and low operating voltage (±1 V). Doping the thin film of TiO2 with metal–non-metal had a significant effect on the switching properties and conduction mechanism as it directly affected the energy bandgap by lowering it from 3.2 eV to 2.76 eV. Doping enhanced the mobility of charge carriers and eased the process of filament formation by suppressing its randomness between electrodes under the applied electric field. Furthermore, metal–non-metal-doped TiO2 thin film exhibited less switching current and improved non-linearity by controlling the surface defects.
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影响因子：
13.3
作者：
Kim, Sungjun;Jung, Sunghun;Park, Byung-Gook
通讯作者：
Park, Byung-Gook
水热法制备Ce、N共掺杂TiO2的表征及活性
影响因子：
15.1
作者：
Nasir, Muhammad;Bagwasi, Segomotso;Zhang, Jinlong
通讯作者：
Zhang, Jinlong
DOI：
10.1080/17445760.2017.1314472
发表时间：
2018-01-01
影响因子：
1.1
作者：
Nugent, M. Alexander;Molter, Timothy W.
通讯作者：
Molter, Timothy W.
影响因子：
2.4
作者：
Rehman, Muhammad Muqeet;Yang, Bong-Su;Choi, Kyung Hyun
通讯作者：
Choi, Kyung Hyun
影响因子：
4.6
作者：
Chakrabarti B;Lastras-Montaño MA;Adam G;Prezioso M;Hoskins B;Payvand M;Madhavan A;Ghofrani A;Theogarajan L;Cheng KT;Strukov DB
通讯作者：
Strukov DB