Growth characteristics of single‐crystalline ZnMgO layers by ultrasonic spray assisted mist CVD technique

Growth characteristics of single‐crystalline ZnMgO layers by ultrasonic spray assisted mist CVD technique
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超声波喷雾辅助雾化CVD单晶ZnMgO层的生长特性

DOI:
10.1002/pssb.200983247
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发表时间:
2010
期刊:
physica status solidi (b)
影响因子:
--
通讯作者:
S. Fujita
S. Fujita
中科院分区:
--
文献类型:
--
作者:
H. Nishinaka;Y. Kamada;Naoki Kameyama;S. Fujita

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采用一种简单、安全、经济的超声喷雾化学气相沉积方法在带有氧化锌缓冲层的a面蓝宝石衬底上生长了−_xMg_xO合金薄膜。在x=0~0.25时,制备了(0001)取向的纤锌矿−_xMg_xO单晶薄膜。光学带隙可调至3.28~3.96 eV,具有纯纤锌矿结构(x = 为0-0.25)。在x = 为0.31时,纤锌矿中有少量的岩盐型锌镁氧化物偏析,但禁带宽度高达4.10 eV。−_xMg_xO合金在3.28(x = _0)~4.04 eV(x_ = _(0.31))能量范围内表现出室温紫外光阴极发光,未观察到深能级发射。这种新的生长技术可以促进各种具有独特功能的氧化物薄膜的发展。
A simple, safe, and cost‐effective ultrasonic spray assisted mist chemical vapor deposition (CVD) method has been applied for the growth of Zn1−xMgxO alloy thin films on a‐plane sapphire substrates with ZnO buffer layers. Single‐crystalline (0001)‐oriented wurtzite Zn1−xMgxO thin films have been prepared for x of between x = 0 and 0.25. The optical bandgap can be tuned from 3.28 to 3.96 eV with a pure wurtzite phase (x = 0–0.25). At x = 0.31 slight segregation of rocksalt ZnMgO was seen in wurtzite ZnMgO, but the bandgap was as large as 4.10 eV. Zn1−xMgxO alloys exhibited room temperature ultraviolet cathode luminescence (CL) at energies between 3.28 (x = 0) and 4.04 eV (x = 0.31) without no observable deep level emissions. This novel growth technique can contribute to evolution of various oxide thin films of unique functions.
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