The fabrication of nanostructures with a large range of dimensions and the potential application for light outcoupling in organic light-emitting diodes

The fabrication of nanostructures with a large range of dimensions and the potential application for light outcoupling in organic light-emitting diodes
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大尺寸纳米结构的制造及其在有机发光二极管中光耦合的潜在应用

DOI:
10.1088/1361-6439/aaee08
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发表时间:
2019-01
影响因子:
2.3
通讯作者:
Tu Guoli
Tu Guoli
中科院分区:
工程技术4区
文献类型:
--
作者:
Li Yungui;Shi Ting;Gao Xiang;Tu Guoli

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The fabrication of a nanostructure with a size of hundreds of nanometers down to sub-20 nm is investigated and demonstrated by e-beam lithography (EBL). The proximity effect influenced by the exposure dose during EBL is explored and analyzed for both pillar and grating patterns with positive and negative photoresist. By good control of the proximity effect and etching process, grating patterns from hundreds of nanometers down to about 20 nm are obtained. Furthermore, a pillar structure with a size down to sub-20 nm is achieved by annealing treatment of the photoresist hydrogen silsesquioxane at 400 C without any further etching process. These nanostructures show great potential for efficiency enhancement of organic light-emitting diodes (OLEDs). The finite element analysis demonstrates there is the possibility of enhancing the external quantum efficiency of OLEDs peaking at 510 nm by a factor of 1.4. Such a high enhancement factor can only be achieved with finely controlled nanostructures, indicating the importance of size control during nanofabrication.
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