Defect Reduction in AlN Epilayers Grown by MOCVD via Intermediate-Temperature Interlayers
Defect Reduction in AlN Epilayers Grown by MOCVD via Intermediate-Temperature Interlayers
复制标题
通过中温中间层 MOCVD 生长的 AlN 外延层中的缺陷减少
DOI：
10.1007/s11664-014-3462-1
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发表时间：
2014
影响因子：
2.1
通讯作者：
Chen Changqing
中科院分区：
文献类型：
--
作者：
Chen Shengchang;Li Yang;Ding Yanyan;Li Senlin;Zhang Min;Wu Zhihao;Fang Yanyan;Dai Jiangnan;Chen Changqing
In this work, significant reduction of the density of threading dislocations (TDs) in AlN epilayers grown on sapphire substrates via metalorganic chemical vapor deposition has been obtained by insertion of thin intermediate-temperature interlayers (IT-ILs). The growth temperature of the IT-ILs ranged from 750°C to 950°C after the initial growth at high temperature of 1200°C. Detailed characterizations were performed to understand the mechanisms of the reduction in dislocation density. It is found that the relatively low growth temperature of the IT-ILs can modify the originally two-dimensional (2D) growth mode to a three-dimensional (3D) growth process and creates a high density of small islands at the interface. During the subsequent growth of the high-temperature AlN layer, the AlN islands initially coalesce to form larger grains as the growth proceeds, and some TDs present in the previous AlN epilayers are found to bend near the interlayer, leading to dislocation merging and annihilation.
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影响因子：
1.8
作者：
S. Keller;S. Denbaars
通讯作者：
S. Keller;S. Denbaars
影响因子：
4
作者：
Jianping Zhang;D. Jiang;Qian Sun;Jin-yun Wang;Y. Wang;J. P. Liu;J. X. Chen;R. Jin;Juye Zhu;H. Yang;T. Dai;Q. Jia
通讯作者：
Jianping Zhang;D. Jiang;Qian Sun;Jin-yun Wang;Y. Wang;J. P. Liu;J. X. Chen;R. Jin;Juye Zhu;H. Yang;T. Dai;Q. Jia
影响因子：
1.8
作者：
Taniyasu, Yoshitaka;Kasu, Makoto;Makimoto, Toshiki
通讯作者：
Makimoto, Toshiki
影响因子：
4
作者：
KHAN, MA;KUZNIA, JN;CHOYKE, WJ
通讯作者：
CHOYKE, WJ
影响因子：
4
作者：
Hirayama, Hideki;Yatabe, Tohru;Kamata, Norihiko
通讯作者：
Kamata, Norihiko