Molecular dynamics simulation of nanoscale contact and sliding processes for probes with different tip radius of curvature
Molecular dynamics simulation of nanoscale contact and sliding processes for probes with different tip radius of curvature
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不同尖端曲率半径探针纳米级接触和滑动过程的分子动力学模拟
DOI：
10.1007/s11434-014-0179-8
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发表时间：
2014-02
影响因子：
--
通讯作者：
Zhan Shengpeng
中科院分区：
文献类型：
--
作者：
Yang Xiaojing;Zhan Shengpeng
采用三维分子动力学模拟方法研究了不同针尖曲率半径的金刚石针尖与单晶铜表面的接触和滑动过程。研究了材料的变形、磨损机理、晶格缺陷、接触过程中的受力以及滑动摩擦过程。模拟结果表明，接触过程中的接触力，位错和层错缺陷，增加接触深度或尖端曲率半径。位错沿着方向发射，形成滑移带.还发现，尖端曲率半径越大，凹槽越大，材料变形越大。法向力和摩擦力随着尖端曲率半径的增大而增大，但摩擦系数减小。层错沿着滑动方向扩展，并随尖端曲率半径的增大而增大。此外，随着针尖曲率半径或滑动距离的增加，隆起原子的数量也随之增加。
Three-dimensional molecular dynamics (MD) simulations were carried out to study the contact and sliding processes between diamond points with different tip radius of curvature and surfaces of single crystal copper. The material deformation, abrasion mechanism, lattice defects, the force of contact process, and the sliding friction process were investigated. The simulation results show that the contact force, dislocations, and stacking fault defects, increase during the contact process with increasing contact depth or tip radius of curvature. The dislocations emit along theanddirection and then a glide band is formed. It was also found that a greater tip radius of curvature results in a larger groove and more material deformation. The normal force and friction increase with increasing tip radius of curvature, but the coefficient of friction decreases. The stacking faults spread along the sliding direction and increase with increasing tip radius of curvature. In addition, the number of upheaval atoms increases as the radius of tip curvature or sliding distance increases.
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影响因子：
1.6
作者：
H. M. Khan;Sung-Gaun Kim
通讯作者：
H. M. Khan;Sung-Gaun Kim
影响因子：
6.7
作者：
Yongda Yan;T. Sun;S. Dong;Xichun Luo;Yingchun Liang
通讯作者：
Yongda Yan;T. Sun;S. Dong;Xichun Luo;Yingchun Liang
影响因子：
--
作者：
Xuezeng Zhao
通讯作者：
Xuezeng Zhao
影响因子：
1.9
作者：
AIME, JP;ELKAAKOUR, Z;CURELY, J
通讯作者：
CURELY, J
DOI：
10.1007/s003390051157
发表时间：
1998-03
期刊：
Applied Physics A
影响因子：
--
作者：
G. Shang;X. Qiu;Changtao Wang;C. Bai
通讯作者：
G. Shang;X. Qiu;Changtao Wang;C. Bai