Investigation of Tb-doping on structural transition and multiferroic properties of BiFeO3 thin films
Investigation of Tb-doping on structural transition and multiferroic properties of BiFeO3 thin films
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Tb掺杂对BiFeO3薄膜结构转变和多铁性的研究
DOI：
10.1016/j.ceramint.2013.11.089
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发表时间：
2014-06
影响因子：
5.2
通讯作者：
Xia Ao
中科院分区：
文献类型：
--
作者：
Dong Guohua;Tan Guoqiang;Luo Yangyang;Liu Wenlong;Ren Huijun;Xia Ao
采用溶胶-凝胶旋涂法在掺氟氧化锡（FTO）衬底上制备了纯BiFeO 3（BFO）和Bi 1 − xTbxFeO 3（BTFO）薄膜。系统地研究了Tb掺杂对BTFO薄膜的结构转变、漏电流、介电和多铁性的影响。XRD、Rietveld精修和拉曼光谱结果清楚地表明，Tb掺杂后，晶体结构发生了从菱面体（R3 c：H）到双相结构（R3 c：H+R-3 m：R）的转变。BTFOx= 0.10薄膜的漏电流密度比纯BFO低两个数量级，在100 kV/cm时为5.1×10−7A/cm 2。此外，BTFO薄膜的导电机制是由空间电荷限制导电。当BTFOx= 0.10时，两相共存使样品具有上级的铁电性（2 Pr =135.1 μC/cm ~ 2）和铁磁性能（Ms= 6.3emu/cm ~ 3）。BTFO薄膜的最佳性能主要归因于双相结构和FeO 6八面体的扭曲变形。
Pure BiFeO3(BFO) and Bi1−xTbxFeO3(BTFO) thin films were successfully prepared on FTO (fluorine doped tin oxide) substrates by the sol–gel spin-coating method. The effects of Tb-doping on the structural transition, leakage current, and dielectric and multiferroic properties of the BTFO thin films have been investigated systematically. XRD, Rietveld refinement and Raman spectroscopy results clearly reveal that a structural transition occurs from the rhombohedral (R3c:H) to the biphasic structure (R3c:H+R-3m:R) with Tb-doping. The leakage current density of BTFOx=0.10thin film is two orders lower than that of the pure BFO, i.e. 5.1×10−7A/cm2at 100 kV/cm. Furthermore, the electrical conduction mechanism of the BTFO thin films is dominated by space-charge-limited conduction. The two-phase coexistence of BTFOx=0.10gives rise to the superior ferroelectric (2Pr=135.1 μC/cm2) and the enhanced ferromagnetic properties (Ms=6.3 emu/cm3). The optimal performance of the BTFO thin films is mainly attributed to the biphasic structure and the distorted deformation of FeO6octahedra.
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影响因子：
4
作者：
B. Jiang;Xiaolong Li;Hongyan Zhang;Wen Sun;Jingjing Liu;G. Hu
通讯作者：
B. Jiang;Xiaolong Li;Hongyan Zhang;Wen Sun;Jingjing Liu;G. Hu
Tb 掺杂对 BiFeO3 薄膜电磁性能的影响
影响因子：
3.2
作者：
通讯作者：
--
影响因子：
3.7
作者：
Christen, H. M.;Nam, J. H.;Spaldin, N. A.
通讯作者：
Spaldin, N. A.
影响因子：
3.2
作者：
RICHARDSON, JT;YIAGAS, DI;TWIGG, MV
通讯作者：
TWIGG, MV
影响因子：
6
作者：
F. Yan;T. Zhu;M. Lai;Ling Lu
通讯作者：
F. Yan;T. Zhu;M. Lai;Ling Lu