Direct current magnetron sputtered Cu2ZnSnS4 thin films using a ceramic quaternary target
Direct current magnetron sputtered Cu2ZnSnS4 thin films using a ceramic quaternary target
复制标题
使用陶瓷四元靶材直流磁控溅射 Cu2ZnSnS4 薄膜
DOI：
10.1016/j.jallcom.2017.08.226
复制
发表时间：
2017-12
影响因子：
6.2
通讯作者：
Huang Qiang
中科院分区：
文献类型：
--
作者：
Zhu Yan;Chen Yiqi;Shen Tao;Yi Jianhong;Gan Guoyou;Huang Qiang
采用直流磁控溅射法在钠钙玻璃基片上制备了Cu 2 ZnSnS 4（CZTS）薄膜。研究了直流电源、衬底温度和硫化温度对薄膜成分、晶体结构、表面形貌和光学性能的影响。在中等功率下直接溅射得到贫铜和富锡的铜黄锡矿CZTS薄膜，高于和低于该功率的薄膜都是非晶的。当衬底温度达到200 °C时，膜组成保持相对不变，当温度进一步升高时，观察到Sn含量增加和Cu含量减少。溅射产率，由于升华的原子损失以及操作条件的影响被用来解释这种成分的变化。同时观察到的第二相，不均匀的形貌以及增加的带隙与高Sn含量的这些溅射膜。对溅射的CZTS薄膜进行了硫化处理，进一步提高了薄膜的结晶度和光学性能。最佳硫化温度为550 °C，此时薄膜呈现纯CZTS相，最大吸收系数（> 104 cm-1）和理论带隙（1.55 eV）。
Direct current (DC) magnetron sputtering was employed to prepare Cu2ZnSnS4(CZTS) thin films on soda-lime glass substrates from a ceramic quaternary CZTS target. The influences of DC power, substrate temperature and sulfurization temperature on the composition, crystal structure, surface morphology as well as the optical properties of the films were investigated. Crystalline Cu-poor and Sn-rich kesterite CZTS films were obtained directly from sputtering at a median power, above and below which films were both amorphous. While the film composition remained relatively unchanged with the substrate temperature up to 200 °C, increase of Sn content and decrease of Cu content were observed when the temperature further increased. Sputtering yield, atomic loss due to sublimation as well as the effects of operation conditions were used to explain such compositional change. A secondary phase, less uniform morphology as well as an increased band gap were observed simultaneously for these sputtered films with high Sn content. Sulfurization was carried out to further improve the crystallinity and optical properties of the sputtered CZTS films. An optimal sulfurization temperature of 550 °C was observed, where the film presented a pure CZTS phase, a maximum absorption coefficient (>104cm−1) and a theoretic bandgap (1.55 eV).
登录
查看更多内容
影响因子：
6.2
作者：
Y. Ocak
通讯作者：
Y. Ocak
影响因子：
1.5
作者：
N. Momose;M. Htay;Takuto Yudasaka;S. Igarashi;T. Seki;S. Iwano;Y. Hashimoto;K. Ito
通讯作者：
N. Momose;M. Htay;Takuto Yudasaka;S. Igarashi;T. Seki;S. Iwano;Y. Hashimoto;K. Ito
影响因子：
5
作者：
P. Sigmund
通讯作者：
P. Sigmund
影响因子：
4
作者：
R. Summitt;J. Marley;N. Borrelli
通讯作者：
R. Summitt;J. Marley;N. Borrelli
影响因子：
4
作者：
M. Xie;Daming Zhuang;Ming Zhao;B. Li;M. Cao;Jun-Kwang Song
通讯作者：
M. Xie;Daming Zhuang;Ming Zhao;B. Li;M. Cao;Jun-Kwang Song