Three-dimensional structure of antiphase domains in GaP on Si(0 0 1)
Three-dimensional structure of antiphase domains in GaP on Si(0 0 1)
复制标题
Si(0â0â1)上GaP反相畴的三维结构
DOI:
10.1088/1361-648x/aafcfb
复制
发表时间:
2019
期刊:
影响因子:
--
通讯作者:
A. Lenz
中科院分区:
文献类型:
--
作者:
P. Farin ;M. Marquardt;W. Martyanov;J. Belz;A. Beyer;K. Volz;A. Lenz
Antiphase domains are three-dimensional crystal defects commonly arising at the interface of III–V semiconductors and Si. While control over their formation has been achieved, the geometry of the antiphase domain itself that is separated from the mainphase of the crystal by the so-called antiphase boundary, has not yet been fully understood. In this work, we first investigate the interface between GaP and Si itself by cross-sectional scanning tunneling microscopy (XSTM) to reveal possible intermixing within an 8 monolayers wide region. Furthermore, we present an extensive analysis combining transmission electron microscopy and XSTM to elucidate the shape of antiphase domains in GaP. To create a true-to-scale, three-dimensional model of an antiphase domain, firstly, plan-view transmission electron microscopy images are drawn on. Subsequently, the progression of many antiphase boundaries through the GaP crystal as viewed from the (1 1 0) and (1 0) cleavage planes is analyzed all the way down to the atomic level by means of XSTM. This enables a detailed analysis of the shape and physical dimensions of the antiphase domains. A typical measured extension in growth directions is found to be a maximum of 60 nm and the maximum measured extension of the base plane in [1 0] and [1 1 0] directions is about 160 nm and 50 nm, respectively. They appear as pyramids with anisotropic base planes whose side facets kink many times.
登录
查看更多内容
影响因子:
1.9
作者:
M. A. Lutz;R. Feenstra;J. Chu
通讯作者:
J. Chu
影响因子:
3.2
作者:
E. Tea;J. Vidal;L. Pédesseau;C. Cornet;J. Jancu;J. Even;S. Laribi;J. Guillemoles;O. Durand
通讯作者:
O. Durand
影响因子:
3.2
作者:
Beyer, Andreas;Nemeth, Igor;Volz, Kerstin
通讯作者:
Volz, Kerstin
影响因子:
4
作者:
Y. Fujimoto;H. Yonezu;A. Utsumi;K. Momose;Y. Furukawa
通讯作者:
Y. Furukawa
DOI:
10.1088/0022-3719/10/11/026
发表时间:
1977
期刊:
Journal of Physics C: Solid State Physics
影响因子:
--
作者:
C. Calandra;F. Manghi;C. M. Bertoni
通讯作者:
C. M. Bertoni