Metal-Catalyst-Free Growth of Silica Nanowires and Carbon Nanotubes Using Ge Nanostructures
Metal-Catalyst-Free Growth of Silica Nanowires and Carbon Nanotubes Using Ge Nanostructures
复制标题
使用 Ge 纳米结构无金属催化剂生长二氧化硅纳米线和碳纳米管
DOI:
10.1143/jjap.50.04dn02
复制
发表时间:
2011
影响因子:
1.5
通讯作者:
Uchino T
中科院分区:
文献类型:
--
作者:
Uchino T
The use of Ge nanostructures is investigated for the metal-catalyst-free growth of silica nanowires and carbon nanotubes (CNTs). Silica nanowires with diameters of 10–50 nm and lengths of≤ 1 µm were grown from SiGe islands, Ge dots, and Ge nanoparticles. High-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS) reveal that the nanowires grow from oxide nanoparticles on the sample surface. We propose that the growth mechanism is thermal diffusion of oxide through the GeO 2 nanostructures. CNTs with diameters 0.6–2.5 nm and lengths of less than a few µm were similarly grown by chemical vapor deposition from different types of Ge nanostructures. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D-band, indicating single walled CNTs with a low defect density. HRTEM images reveal that the CNTs also grow from oxide nanoparticles, comprising a mixture of GeO 2 and SiO 2.
登录
查看更多内容
DOI:
--
发表时间:
2005
期刊:
影响因子:
--
作者:
Yu;Wen
通讯作者:
Wen
DOI:
--
发表时间:
1995
期刊:
影响因子:
--
作者:
T. Nakano;N. Mura;Akihiko Tsuzumitani
通讯作者:
Akihiko Tsuzumitani
DOI:
--
发表时间:
2000
期刊:
影响因子:
--
作者:
L. Vescan;T. Stoica;O. Chretien;M. Goryll;E. Mateeva;A. Mück
通讯作者:
A. Mück
影响因子:
10.8
作者:
Takagi, Daisuke;Hibino, Hiroki;Homma, Yoshikazu
通讯作者:
Homma, Yoshikazu
DOI:
--
发表时间:
1999
期刊:
影响因子:
--
作者:
H. Takikawa;M. Yatsuki;T. Sakakibara
通讯作者:
T. Sakakibara