Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells.
Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells.
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DOI：
10.3390/ma11091736
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发表时间：
2018-09-15
期刊：
影响因子：
--
通讯作者：
Dawson P
中科院分区：
文献类型：
--
作者：
Christian G;Kappers M;Massabuau F;Humphreys C;Oliver R;Dawson P
在本文中，我们报告了一系列 InGaN 极性量子阱结构的光学特性，其中阱数量为 1、3、5、7、10 和 15，并且这些结构是通过包含 InGaN Si 掺杂底层而生长的。当量子阱的数量较少时，室温内量子效率可以由来自阱的热电子发射主导。之所以会发生这种情况，是因为 InGaN 极性量子阱中的辐射复合率可能较低，这是由于量子阱上的内置电场使热电子发射过程在室温下有效竞争，从而限制了内部量子效率。在我们在这里讨论的结构中，由于硅掺杂底层的作用降低了量子阱上的电场，辐射复合率有所增加。这导致热电子发射的影响被很大程度上消除到室温下的内量子效率与量子阱的数量无关的程度。
In this paper we report on the optical properties of a series of InGaN polar quantum well structures where the number of wells was 1, 3, 5, 7, 10 and 15 and which were grown with the inclusion of an InGaN Si-doped underlayer. When the number of quantum wells is low then the room temperature internal quantum efficiency can be dominated by thermionic emission from the wells. This can occur because the radiative recombination rate in InGaN polar quantum wells can be low due to the built-in electric field across the quantum well which allows the thermionic emission process to compete effectively at room temperature limiting the internal quantum efficiency. In the structures that we discuss here, the radiative recombination rate is increased due to the effects of the Si-doped underlayer which reduces the electric field across the quantum wells. This results in the effect of thermionic emission being largely eliminated to such an extent that the internal quantum efficiency at room temperature is independent of the number of quantum wells.
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