Effects of annealing on the characteristics of ZnO films deposited in various O2/(O2+Ar) ratios
Effects of annealing on the characteristics of ZnO films deposited in various O2/(O2+Ar) ratios
复制标题
退火对不同O2/(O2 Ar)比例沉积的ZnO薄膜特性的影响
DOI：
10.1007/s11801-010-0036-1
复制
发表时间：
2010-10
影响因子：
0.9
通讯作者：
Wu, Xiao-guo
中科院分区：
文献类型：
--
作者：
Li, Cui-ping;Yang, Bao-he;Chen, Xi-ming;Wu, Xiao-guo
采用射频（RF）磁控溅射技术，在不同O2/(O2+Ar)比的抛光金刚石衬底上沉积c轴取向ZnO薄膜，并在相同条件下在氧气环境中退火。采用x射线衍射仪（XRD）、高阻仪、能谱仪（EDS）和扫描电镜（SEM）对ZnO薄膜的结构、形貌和电学性能进行了表征。随着O2/(O2+Ar)比从1/12增加到5/12，生长ZnO薄膜的结晶度变好，电阻率增加缓慢。退火后，在O2/(O2+Ar) =1/12和3/12条件下沉积的ZnO薄膜结晶度有较大改善，其电阻率提高了2个数量级，而在O2/(O2+Ar) =5/12条件下沉积的ZnO薄膜结晶度变化不大，电阻率仅提高了1个数量级。此外，在O2/(O2+Ar) =3/12条件下沉积和在氧中退火的ZnO薄膜具有最好的晶体质量和最高的电阻率。
C-axis oriented ZnO films are deposited on polished diamond substrates in various O2/(O2+Ar) ratios using the radio frequency (RF) magnetron sputtering technique and are subsequently annealed in oxygen ambience under the same conditions. Structural, morphologic and electrical properties of ZnO films are characterized by X-ray diffraction (XRD), high-resistance instrument, energy dispersive X-ray spectroscopy (EDS) and scanning electronic microscopy (SEM). As the O2/(O2+Ar) ratio increasing from 1/12 to 5/12, the crystallinity of the as grown ZnO films becomes better and the electrical resistivity increases slowly. After annealing, the ZnO films deposited in O2/(O2+Ar) =1/12 and 3/12 are improved greatly in crystallinity, and their electrical resistivity is enhanced by two orders of magnitude, while those deposited in O2/(O2+Ar) =5/12 are scarcely changed in crystallinity, and their resistivity is only increased by one order. In addition, the ZnO films deposited in O2/(O2+Ar) =3/12 and annealed in oxygen are with the best crystal quality and the highest resistivity.
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DOI：
10.1002/pssa.200673324
发表时间：
2007-02
期刊：
physica status solidi (a)
影响因子：
--
作者：
R. Segura;A. Tello;G. Cardenas;P. Häberle
通讯作者：
R. Segura;A. Tello;G. Cardenas;P. Häberle
影响因子：
--
作者：
Jian Sun-;Y. Bai;Jingchang Sun;G. Du;Xin Jiang
通讯作者：
Jian Sun-;Y. Bai;Jingchang Sun;G. Du;Xin Jiang
影响因子：
0.9
作者：
Mingxian Wang;B. K. Woo;Z. Tian;Jiaguang Han;Wei Chen;Weili Zhang
通讯作者：
Mingxian Wang;B. K. Woo;Z. Tian;Jiaguang Han;Wei Chen;Weili Zhang
影响因子：
3.2
作者：
Kang, HS;Kang, JS;Lee, SY
通讯作者：
Lee, SY
影响因子：
6.7
作者：
Kumar, Rajesh;Khare, Neeraj;Bhalla, G. L.
通讯作者：
Bhalla, G. L.