Mechanisms in thermal stress aided electroless etching of GaN grown on sapphire and approaches to vertical devices
Mechanisms in thermal stress aided electroless etching of GaN grown on sapphire and approaches to vertical devices
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蓝宝石上生长的 GaN 的热应力辅助化学蚀刻机制以及垂直器件的方法
DOI：
10.1039/c3ra40794b
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发表时间：
2013-06
期刊：
影响因子：
3.9
通讯作者：
Wang, Guohong
中科院分区：
文献类型：
--
作者：
Yang, Hua;Yuan, Guodong;Yi, Xiaoyan;Wang, Guohong
对蓝宝石衬底上外延GaN的热应力辅助无电刻蚀（TSEE）工艺进行了实验和理论研究。利用GaN/蓝宝石界面的热剥离应力，通过无电刻蚀成功地将蓝宝石从外延GaN中分离出来。ANSYS模拟表明，在芯片的边缘剥离应力急剧增加。本文从宏观和微观两个方面对TSEE过程的机理进行了阐述。根据实验结果，定量分析了腐蚀温度和腐蚀液浓度对TSEE工艺的影响。X射线衍射（XRD）和透射电子显微镜（TEM）的结果表明，与TSEE工艺的外延GaN结晶度的改善。对TSEE过程机理的分析无疑将加深我们对半导体刻蚀的理解，并促进更多潜在的应用。
A thermal stress aided electroless etching (TSEE) process of epitaxial GaN on sapphire has been demonstrated experimentally and theoretically. The sapphire has been successfully separated from the epitaxial GaN by electroless etching assisted by the thermal peeling stress at the GaN/sapphire interface. ANSYS simulation indicates a sharp increase in peeling stress at the edge of the chip. The mechanism of the TSEE process has been elucidated in macro- and micro-interpretation in this paper, which is based on a charge transfer reaction model with a thermodynamic cycle and an Arrhenius equation. The influences of etching temperature (ET) and etchant concentration (EC) on the TSEE process were quantitatively analyzed based on experimental results. X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) results show an improvement in the epitaxial GaN crystallinity with the TSEE process. Analysis of the mechanisms of the TSEE process will undoubtedly deepen our understanding of semiconductor etching and facilitate more potential applications.
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影响因子：
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作者：
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