Linear positive and negative magnetoresistance in topological insulator Bi2Se3 flakes
Linear positive and negative magnetoresistance in topological insulator Bi2Se3 flakes
复制标题
拓扑绝缘体 Bi2Se3 薄片中的线性正负磁阻
DOI：
10.1063/1.5044686
复制
发表时间：
2018-09
影响因子：
4
通讯作者：
Wang Jiannong
中科院分区：
文献类型：
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作者：
Zhang Huachen;Li Hui;Wang Huanwen;Cheng Guanghui;He Hongtao;Wang Jiannong
The linear positive magnetoresistance (MR) and negative MR are emerging as intriguing phenomena in topological materials. Here, we report the magnetotransport properties of topological insulator Bi2Se3 flakes with different thicknesses grown by chemical vapor deposition. A non-saturating positive MR is observed in the perpendicular fields (B⊥I), while an evident negative MR is observed in the parallel fields (B//I). Both the positive MR and negative MR show a linear magnetic field dependence at high magnetic fields (B > 8 T). In addition, two types of carriers are extracted from the nonlinear Hall resistance measurements, which are attributed to the Bi2Se3 bulk electrons and the electron accumulation layer at the surface or Bi2Se3/SiO2 interface, respectively. The conductivity fluctuations in the accumulation layer are believed to be the origin for the observation of positive MR in the perpendicular fields and negative MR in the parallel fields with linear and non-saturating characteristics.
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影响因子：
5.5
作者：
Hongchao Liu;Shiguang Liu;Ya Yi;Hongtao He;Jiannong Wang
通讯作者：
Hongchao Liu;Shiguang Liu;Ya Yi;Hongtao He;Jiannong Wang
影响因子：
4
作者：
He, Hongtao;Li, Baikui;Wang, Jiannong
通讯作者：
Wang, Jiannong
具有栅极可调体传导和表面传导的双极拓扑绝缘体晶体管中的量子和经典磁阻
影响因子：
4.6
作者：
Tian J;Chang C;Cao H;He K;Ma X;Xue Q;Chen YP
通讯作者：
Chen YP
影响因子：
4
作者：
W. Wang;K. Gao;Q. Li;Zhi-Qing Li
通讯作者：
W. Wang;K. Gao;Q. Li;Zhi-Qing Li
影响因子：
16.6
作者：
通讯作者：
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