Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors
Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors
复制标题
量子约束调制对纳米薄体GaSb/InAs隧道场效应晶体管性能的影响
DOI：
10.1063/1.4985610
复制
发表时间：
2017-06
影响因子：
3.2
通讯作者：
Jiang Xiang Wei
中科院分区：
文献类型：
--
作者：
Wang Zhi;Wang Liwei;En Yunfei;Jiang Xiang Wei
本文采用原子量子模拟方法研究了纳米体厚GaSb/InAs异质结隧道场效应晶体管(TFET)的器件性能。结果表明，随着TFET结厚度的减小，薄结引起的量子限制效应导致异质结型从III型向III型转变，这可以作为TFET器件性能的有效调制。结果表明，随着沟道厚度的减小，由于量子限制效应引起的有效禁带宽度增大，器件的通断电流均显著减小。另外，异质结GaSb/InAs TFET的关断电流始终大于同质结InAs TFET的关断电流，这可能是由于GaSb/InAs界面态辅助隧道效应引起的。结果还表明，随着沟道厚度的减小，异质结TFET的亚阈值摆幅变化不大。
In this paper, we have presented an atomistic quantum simulation study to investigate the device performances of GaSb/InAs heterojunction tunnel field-effect transistors (TFETs) with nanometer body thicknesses. It is revealed that the thin junction induced quantum confinement effect results in a heterojunction type transition from type-III to type-II as the junction thickness reduces, which can be used as an effective modulation of the TFET device performance. It is found that as the channel thickness decreases, both the ON current and OFF current of the device decrease significantly due to the quantum confinement induced effective band gap enlargement. In addition, the OFF current of the heterojunction GaSb/InAs TFET is always larger than that of the homojunction InAs TFET, which is possibly caused by the GaSb/InAs interfacial state assisted tunneling. It is also revealed that the subthreshold swing of the heterojunction TFET does not change much as the channel thickness is reduced.
登录
查看更多内容
影响因子：
4
作者：
B. Romanczyk;P. Thomas;D. Pawlik;S. Rommel;W. Loh;M. Wong;K. Majumdar;W. Wang;P. Kirsch
通讯作者：
B. Romanczyk;P. Thomas;D. Pawlik;S. Rommel;W. Loh;M. Wong;K. Majumdar;W. Wang;P. Kirsch
DOI：
10.1109/43.62751
发表时间：
1990-11-01
影响因子：
2.9
作者：
WACHUTKA, GK
通讯作者：
WACHUTKA, GK
影响因子：
0.5
作者：
T. Sakurai
通讯作者：
T. Sakurai
影响因子：
3.7
作者：
Lin-wang Wang;A. Zunger
通讯作者：
Lin-wang Wang;A. Zunger
影响因子：
10.8
作者：
Ganjipour, Bahram;Dey, Anil W.;Thelander, Claes
通讯作者：
Thelander, Claes