Effects of metal content on electrical and physical properties in solution-processed IGZO thin films
Effects of metal content on electrical and physical properties in solution-processed IGZO thin films
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金属含量对溶液加工 IGZO 薄膜电学和物理性能的影响
DOI：
10.1007/s00339-020-03579-2
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Ohki Yoshimichi
中科院分区：
文献类型：
--
作者：
Morimoto Takaaki;Yang Yicheng;Ochiai Yusuke;Fukuda Nobuko;Ohki Yoshimichi
采用溶液工艺和低温后退火工艺制备的氧化铟镓锌薄膜晶体管（IGZO）的导通电流随着Ga含量的降低而单调增加。这种趋势是不同的IGZO制造的溶液工艺，它示出了最大的电子迁移率在Ga含量为33%。为了阐明其原因，采用X射线光电子能谱（XPS）、紫外光电子能谱（UV）、光致发光（PL）和紫外-可见吸收（UV-Vis）等光谱方法研究了固溶处理后IGZO中Ga和In含量对其氧缺陷和能带结构的影响。当Ga含量低时，氧空位变得不太丰富。In含量的增加对氧空位也有类似的影响。我们已经报道了Ga在低温下没有被充分氧化，这应该导致氧空位的产生。根据这一理论，可以解释上述氧空位的减少。此外，当这些膜实际用作TFT沟道时，导通电流随着Ga含量的降低而增加。由此可见，在低温下后退火的溶液处理的IGZO中，氧空位主要充当降低导通电流的电子陷阱，而不是充当施主。在制造柔性器件时，即使我们将工艺温度降低到足以抑制对聚合物衬底的损坏，器件也必须保持良好的性能。我们的研究结果表明，一个最佳的金属比不同于一个典型的真空工艺是必要的，以提高性能的IGZO TFT的低温溶液工艺制造。
The on-current of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) fabricated by solution process with low-temperature post-annealing increases monotonically with the decrease in the Ga content. This trend is different from that of IGZO fabricated by a solution process, which shows the maximum electron mobility at a Ga content of 33%. To clarify its cause, effects of Ga and In contents in solution-processed IGZO post-annealed at a low-temperature on their oxygen deficiency and band structures were investigated with spectroscopic methods such as X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, photoluminescence, and ultraviolet–visible absorption. When the Ga content is low, the oxygen vacancy becomes less abundant. The increase in In content exhibits similar effects on the oxygen vacancy. We have reported that Ga is not oxidized sufficiently at low temperatures, which should cause the generation of oxygen vacancies. By this theory, the above-mentioned decrease in oxygen vacancies can be explained. Furthermore, when these films are actually used as TFT channels, the on-current increases with the decrease in Ga content. From this, in solution-processed IGZO post-annealed at a low temperature, oxygen vacancies mainly act as electron traps that decrease the on-current, rather than acting as donors. In manufacturing flexible devices, even when we decrease the process temperature low enough to suppress the damage to polymer substrates, the devices must maintain good performance. Our results suggest that an optimal metal ratio different from that of a typical vacuum process is necessary to improve the performance of IGZO TFTs fabricated by the low-temperature solution process.
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