Global simulation of coupled oxygen and carbon transport in an industrial directional solidification furnace for crystalline silicon ingots: Effect of crucible cover coating

Global simulation of coupled oxygen and carbon transport in an industrial directional solidification furnace for crystalline silicon ingots: Effect of crucible cover coating
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晶体硅锭工业定向凝固炉中氧碳耦合传输的全局模拟:坩埚盖涂层的影响

DOI:
10.1016/j.ijheatmasstransfer.2017.01.092
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发表时间:
2017-05
影响因子:
5.2
通讯作者:
Yunfeng Zhang
Yunfeng Zhang
中科院分区:
工程技术2区
文献类型:
--
作者:
Lijun Liu;Wencheng Ma;Xiaofang Qi;Zaoyang Li;Yunfeng Zhang

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为了准确预测工业定向凝固(DS)炉生长的晶体硅锭中的氧(O)和碳(C)分布,首先基于热场和流场的完全耦合计算进行瞬态传热全局模拟。相变问题的焓制定技术的基础上的固定网格的方法来处理。然后进行DS炉中的耦合C和O传输,考虑到五个化学反应。特别注意的是,在整个凝固过程中的O和C杂质偏析的建模。结果表明,该模型能成功地模拟生长界面处的杂质偏聚,得到的边界层厚度与解析计算的结果相近。研究了坩埚盖涂层对O和C耦合输运的影响。计算结果表明,用一层惰性材料覆盖的石墨覆盖层代替纯石墨覆盖层,可使生长硅锭中的C浓度降低约60%,但覆盖层对生长硅锭中的O浓度影响不大。C浓度的数值预测结果与实验测量结果吻合较好。
For accurate prediction of oxygen (O) and carbon (C) distributions in the crystalline silicon ingots grown by the industrial directional solidification (DS) furnace, we first performed transient global simulations of heat transfer based on a fully coupled calculation of the thermal and flow fields. The phase change problem was handled by an enthalpy formulation technique based on a fixed-grid methodology. The coupled C and O transport in the DS furnace was then carried out, taking into account five chemical reactions. Special attention was devoted to modeling the O and C impurity segregation during the entire solidification process. It was found that the developed model can successfully simulate the impurity segregation at the growth interface and the obtained boundary layer thickness is similar to that estimated by analytical calculation. The effect of the crucible cover coating on the coupled O and C transport was investigated. The numerical results show that the C concentration in the grown silicon ingot can be reduced by about 60% if the pure graphite cover was replaced by a graphite cover with an inert material coating on it. However, the cover coating did not significantly affect the O concentration in the grown ingot. The numerical predictions of the C concentration showed satisfactory agreement with the experimental measurements.
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