Microstructure and strain relaxation in thin nanocrystalline platinum films produced via different sputtering techniques
Microstructure and strain relaxation in thin nanocrystalline platinum films produced via different sputtering techniques
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通过不同溅射技术生产的纳米晶铂薄膜的微观结构和应变松弛
DOI：
10.1016/j.apsusc.2016.02.015
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发表时间：
2016
影响因子：
6.7
通讯作者：
H. Schmidt
中科院分区：
文献类型：
--
作者：
W. Gruber;C. Baehtz;M. Horisberger;H. Schmidt
在这项研究中，我们研究了纳米晶Pt薄膜的厚度约为20 nm的不同沉积技术：磁控溅射和离子束溅射的微观结构和残余应变弛豫之间的相关性。使用同步辐射进行X射线衍射。在130 °C和210 °C之间的温度下在原位等温退火期间测量面外晶面间距。的热弹性膨胀系数是相等的两种类型的纳米晶Pt膜和略低于粗晶粒Pt。剩余平面外应变的松弛取决于温度，并且在磁控溅射膜的情况下比离子束溅射膜明显更强。压应力的不同松弛归因于通过相应的沉积技术在沉积期间演化的不同微观结构。通过磁控溅射沉积的（111）布拉格峰周围的厚度条纹揭示了这些膜基本上由覆盖整个膜厚度的柱状（111）取向的晶粒组成。相比之下，通过离子束溅射制备的膜的（111）布拉格峰周围没有观察到厚度条纹，表明显著不同的微结构。这通过电子背散射衍射证实，其揭示了两种类型的膜的（111）织构。然而，在磁控溅射膜的情况下，（111）织构明显更强。在较低的同系温度下的晶粒长大被认为是对残余应力松弛的重要贡献。
In this study we investigated the correlation between microstructure and residual strain relaxation in nanocrystalline Pt films with a thickness of about 20 nm produced by different deposition techniques: magnetron sputtering and ion beam sputtering. X-ray diffractometry was carried out using synchrotron radiation. The out-of-plane interplanar distance was measured during isothermal in situ annealing at temperatures between 130 °C und 210 °C. The thermoelastic expansion coefficient is equal for both types of nanocrystalline Pt films and slightly lower than for coarse grained Pt. The relaxation of residual out-of-plain strain depends on temperature and is significantly stronger in the case of the magnetron sputtered films than for the ion beam sputtered films. Different relaxation of compressive stress is ascribed to the different microstructures which evolve during deposition via the corresponding deposition technique. Thickness fringes around the (1 1 1) Bragg peak deposited via magnetron sputtering reveal that these films are essentially composed of columnar (1 1 1) oriented grains which cover the whole film thickness. In contrast, no thickness fringes are observed around the (1 1 1) Bragg peak of films prepared by ion beam sputtering indicating a significantly different microstructure. This is confirmed by Electron Backscatter Diffraction which reveals a (1 1 1) texture for both types of films. The (1 1 1) texture, however, is significantly stronger in the case of the magnetron sputtered films. Grain growth at low homologous temperatures is considered to be an important contribution to relaxation of residual stress.
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影响因子：
--
作者：
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DOI：
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影响因子：
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DOI：
--
发表时间：
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期刊：
影响因子：
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