Simulations of depleted CMOS sensors for high-radiation environments
Simulations of depleted CMOS sensors for high-radiation environments
复制标题
高辐射环境下耗尽型 CMOS 传感器的模拟
DOI：
10.1088/1748-0221/12/11/c11013
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发表时间：
2017-11
影响因子：
1.3
通讯作者：
Zhang L.
中科院分区：
文献类型：
--
作者：
Liu J.;Barbero M.;Bhat S.;Breugnon P.;Caicedo I.;Chen Z.;Degerli Y.;Godiot-Basolo S.;Guilloux F.;Hemperek T.;Hirono T.;Huegging F.;Krueger H.;Moustakas K.;Pangaud P.;Rozanov A.;Rymaszewski P.;Schwemling P.;Wang M.;Wang T.;Wermes N.;Zhang L.
在大型强子对撞机（LHC）的第二阶段升级之后，增加的光度要求ATLAS实验的新升级的内部跟踪器（ITk）。作为ATLAS ITk的一个可能选项，正在研究一种基于高压/高电阻率CMOS（HV/HR CMOS）技术的新像素探测器。同时，一种新的CMOS像素传感器也正在开发中的圆形电子位置对撞机（CEPC）的跟踪器。为了探索传感器的电学性能，如击穿电压和电荷收集效率，2D/3D技术计算机辅助设计（TCAD）模拟已经仔细进行了上述两个原型。本文将详细讨论为ATLAS ITk开发的HV/HR CMOS传感器的保护环模拟以及为CEPC跟踪器开发的CMOS传感器的电荷收集效率模拟。模拟和最新测量之间的一些比较也将得到解决。
After the Phase II upgrade for the Large Hadron Collider (LHC), the increased luminosity requests a new upgraded Inner Tracker (ITk) for the ATLAS experiment. As a possible option for the ATLAS ITk, a new pixel detector based on High Voltage/High Resistivity CMOS (HV/HR CMOS) technology is under study. Meanwhile, a new CMOS pixel sensor is also under development for the tracker of Circular Electron Position Collider (CEPC). In order to explore the sensor electric properties, such as the breakdown voltage and charge collection efficiency, 2D/3D Technology Computer Aided Design (TCAD) simulations have been performed carefully for the above mentioned both of prototypes. In this paper, the guard-ring simulation for a HV/HR CMOS sensor developed for the ATLAS ITk and the charge collection efficiency simulation for a CMOS sensor explored for the CEPC tracker will be discussed in details. Some comparisons between the simulations and the latest measurements will also be addressed.
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DOI：
10.1016/j.nima.2014.06.035
发表时间：
2014-11
影响因子：
1.4
作者：
I. Perić;C. Kreidl;P. Fischer;F. Bompard;P. Breugnon;J. Clémens;D. Fougeron;J. Liu;P. Pangaud;A. Rozanov;M. Barbero;S. Feigl;M. Capeans;D. Ferrere;H. Pernegger;B. Ristic;D. Muenstermann;S. Sevilla;A. Rosa;A. Miucci;M. Nessi;G. Iacobucci;M. Backhaus;F. Hügging;H. Krüger;T. Hemperek;T. Obermann;N. Wermes;M. Garcia-Sciveres;A. Quadt;J. Weingarten;M. George;J. Grosse-Knetter;J. Rieger;R. Bates;A. Blue;C. Buttar;D. Hynds
通讯作者：
I. Perić;C. Kreidl;P. Fischer;F. Bompard;P. Breugnon;J. Clémens;D. Fougeron;J. Liu;P. Pangaud;A. Rozanov;M. Barbero;S. Feigl;M. Capeans;D. Ferrere;H. Pernegger;B. Ristic;D. Muenstermann;S. Sevilla;A. Rosa;A. Miucci;M. Nessi;G. Iacobucci;M. Backhaus;F. Hügging;H. Krüger;T. Hemperek;T. Obermann;N. Wermes;M. Garcia-Sciveres;A. Quadt;J. Weingarten;M. George;J. Grosse-Knetter;J. Rieger;R. Bates;A. Blue;C. Buttar;D. Hynds
影响因子：
1.3
作者：
L. Zhang;M. Fu;Y. Zhang;W. Yan;M. Wang
通讯作者：
L. Zhang;M. Fu;Y. Zhang;W. Yan;M. Wang
DOI：
--
发表时间：
2011
期刊：
--
影响因子：
--
作者：
M. Barbero;D. Arutinov;M. Backhaus;Xiaochao Fang;L. Gonella;T. Hemperek;M. Karagounis;Hans Krüger;A. Kruth;N. Wermes;P. Breugnon;D. Fougeron;F. Gensolen;M. Menouni;Sasha Rozanov;R. Beccherle;G. Darbo;L. Caminada;S. Dube;Julien Fleury;D. Gnani;M. Garcia-Sciveres;F. Jensen;Yunpeng Lu;A. Mekkaoui;V. Gromov;R. Kluit;J. Schipper;V. Zivkovic;J. Grosse-Knetter;J. Weingarten;M. Kocian
通讯作者：
M. Barbero;D. Arutinov;M. Backhaus;Xiaochao Fang;L. Gonella;T. Hemperek;M. Karagounis;Hans Krüger;A. Kruth;N. Wermes;P. Breugnon;D. Fougeron;F. Gensolen;M. Menouni;Sasha Rozanov;R. Beccherle;G. Darbo;L. Caminada;S. Dube;Julien Fleury;D. Gnani;M. Garcia-Sciveres;F. Jensen;Yunpeng Lu;A. Mekkaoui;V. Gromov;R. Kluit;J. Schipper;V. Zivkovic;J. Grosse-Knetter;J. Weingarten;M. Kocian
DOI：
10.1016/j.nima.2008.03.100
发表时间：
2008-07
影响因子：
1.4
作者：
D. Pennicard;G. Pellegrini;C. Fleta;R. Bates;V. O’Shea;C. Parkes;N. Tartoni
通讯作者：
D. Pennicard;G. Pellegrini;C. Fleta;R. Bates;V. O’Shea;C. Parkes;N. Tartoni
DOI：
--
发表时间：
2015
期刊：
--
影响因子：
--
作者：
M. Ahmad;S. C. F. Wong-S. C. F.-Wong-2148330540;Guo-ming Chen;X. Li;Weiping Wang;W. Yao;Y. X. Li;B. Wang;Yikun Gu-
通讯作者：
M. Ahmad;S. C. F. Wong-S. C. F.-Wong-2148330540;Guo-ming Chen;X. Li;Weiping Wang;W. Yao;Y. X. Li;B. Wang;Yikun Gu-