The occupied electronic structure of ultrathin boron doped diamond.
The occupied electronic structure of ultrathin boron doped diamond.
复制标题
DOI：
10.1039/c9na00593e
复制
发表时间：
2020-03-17
影响因子：
4.7
通讯作者：
Mazzola, F.
中科院分区：
文献类型：
--
作者：
Pakpour-Tabrizi, A. C.;Schenk, A. K.;Holt, A. J. U.;Mahatha, S. K.;Arnold, F.;Bianchi, M.;Jackman, R. B.;Butler, J. E.;Vikharev, A.;Miwa, J. A.;Hofmann, P.;Cooil, S. P.;Wells, J. W.;Mazzola, F.
利用角分辨光电子能谱（angleresolvedphotoelectronspectroscopy，XPS），我们比较了掺硼金刚石（boron-doped diamond，1.8nm）δ-层和块状掺硼金刚石（boron-doped diamond，3 μm）膜的电子能带结构。令人惊讶的是，测量结果表明，除了有效质量的小变化，这些样品的电子结构之间没有显着差异，无论其物理维度如何，除了有效质量的小修改。虽然这表明，目前不可能制造具有量子特性的硼掺杂金刚石结构，但这也意味着可以制造保留体掺杂金刚石的经典电子特性的纳米级硼掺杂金刚石结构，而不需要考虑量子限制的影响。利用角分辨光电子能谱（angleresolvedphotoelectronspectroscopy，XPS），我们比较了掺硼金刚石（boron-doped diamond，1.8nm）δ-层和块状掺硼金刚石（boron-doped diamond，3 μm）膜的电子能带结构。
Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement. Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm).
登录
查看更多内容
影响因子：
4.1
作者：
Grill, A
通讯作者：
Grill, A
影响因子：
4
作者：
Chicot, G.;Thi, T. N. Tran;Pernot, J.
通讯作者：
Pernot, J.
影响因子：
3.2
作者：
Balmer, Richard S.;Friel, Ian;Lang, Richard
通讯作者：
Lang, Richard
影响因子：
3.7
作者：
CHRENKO, RM
通讯作者：
CHRENKO, RM
影响因子：
2.9
作者：
Damascelli, Andrea
通讯作者：
Damascelli, Andrea