Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage
Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage
复制标题
低开启电压 SiC 衬底上生长的未掺杂和 Si 掺杂 AlN 薄膜微尺度冷阴极结构
DOI：
10.1088/1674-1056/24/5/057901
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发表时间：
2015-03
影响因子：
1.7
通讯作者：
Yang Hui
中科院分区：
文献类型：
--
作者：
Wang Qi-Ming;Liu Jian-Ping;Zhang Shu-Ming;Yang Hui
The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride (AlN) thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC (0001) substrate at 1100 degrees C by metal organic chemical vapor deposition (MOCVD) under low pressure. The I-V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I-V and Fowler-Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/mu m and the maximum emission current density is 154 mA/cm(2) at 69.3 V for the Si-doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission.
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